Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.

An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.

A method for forming hermetic seals between the cap and sub-mount for electronic and optoelectronic packages includes the formation of metal mounds on the sealing surfaces. Metal mounds, as precursors to a metal hermetic seal between the cap and sub-mount of a sub-mount assembly, facilitates the evacuation and purging of the volume created within cap and sub-mount assemblies prior to formation of the hermetic seal. The method is applied to discrete cap and sub-mount assemblies and also at the wafer level on singulated and non-singulated cap and sub-mount wafers. The method that includes the formation of the hermetic seal provides an inert environment for a plurality of electrical, optoelectrical, and optical die that are attached within an enclosed volume of the sub-mount assembly.

Embodiments disclosed herein generally relate to optical coupling between a highly-confined waveguide region and a low confined waveguide region in an optical device. The low confined waveguide region includes a trench in a substrate of the optical device in order to provide additional dielectric layer thickness for insulation between the substrate of the optical device and waveguides for light signals having a low optical mode. The low confined waveguide region is coupled to the highly-confined waveguide region via a waveguide overlap and in some embodiments via an intermediary coupling waveguide.

Structures including an optical phased array and methods of fabricating such structures. A first optical phased array includes a first plurality of antennas. A plurality of phase shifters are respectively coupled to the first plurality of antennas. A second optical phased array includes a second plurality of antennas, and a third optical phased array includes a third plurality of antennas. The second optical phased array is located in a first direction relative to the first optical phased array. The third optical phased array is located in a second direction relative to the first optical phased array. The second direction is different from the first direction.

A package includes a photonic integrated circuit die, an electric integrated circuit die, and an encapsulant. The photonic integrated circuit die includes a semiconductor substrate, an insulation layer, and a waveguide. The semiconductor substrate has a notch. The insulation layer is disposed on the semiconductor substrate. The waveguide is disposed on the insulation layer. The notch of the semiconductor substrate is underneath at least a portion of the waveguide. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The encapsulant laterally encapsulates the electric integrated circuit die.

An optical interposer for providing optimal optical coupling between an optical transceiver interface and an external optical interface includes an interposer photonic integrated circuit (PIC) operably configured to couple an optical signal between the optical transceiver interface and the external optical interface, one or more waveguide based optical devices operably integrated on a common substrate and one or more of interposer input/output (I/O) channels operably configured with the optical transceiver interface and the external optical interface.

Structures for an optical coupler and methods of fabricating a structure for an optical coupler. A first waveguide core has a first tapered section and a second waveguide core has a second tapered section positioned adjacent to the first tapered section. The first tapered section has a first shape determined by a first non-linear function, and the second tapered section has a second shape determined by a second non-linear function.

Photonic integrated circuit (PIC) packages include a PIC die. The PIC die includes a waveguide(s) positioned on the PIC die, and a groove(s) formed in a surface of the PIC die. The groove(s) corresponds to and is positioned directly adjacent the waveguide(s). The PIC package also includes an optical fiber(s) operatively coupled to the waveguide(s) of the PIC die. The optical fiber(s) are positioned in the groove(s) of the PIC die and include an end positioned adjacent the waveguide(s). Additionally, the PIC package includes a plate positioned over a section of the optical fiber(s), and the plate includes a first edge positioned adjacent the waveguide(s) of the PIC die, and a second edge positioned opposite the first edge. The PIC package also includes a first adhesive disposed along the second edge of the plate and a second adhesive disposed along the first edge of the plate.

The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to semiconductor devices having a reflector and a photonic component and a method of forming the same. The present disclosure provides a semiconductor device having a substrate, a photonic component arranged above the substrate, a bottom reflector arranged above the substrate and positioned below the photonic component, in which the bottom reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component, and a top reflector arranged above the photonic component, in which the top reflector has a plurality of grating structures configured to reflect electromagnetic waves towards the photonic component.