The present application relates to a method for manufacturing an electro-optical device, wherein a waveguide (3) is provided (S1), a planarization coat (7) overlapping at least a section of the waveguide (3) is fabricated (S2), the planarization coat (7) is provided with a spin-on-glass coating (9) (S3), at least in the region of the spin-on-glass coating (9), a preferably dry chemical etching treatment is carried out (S4), optionally, the steps of providing the planarization coat (7) with a spin-on-glass coating (9) and the etching treatment are repeated at least once (S5, S6), and an active element (10) is provided (S7) on or above the planarization coat (7) and above the waveguide (3).

A hybrid electrical and optic system-on-chip (SOC) device configured for both electrical and optic communication includes a substrate, an electrical device configured for electrical communication arranged on the substrate, a photonics device configured for optic communication arranged on the substrate, and a self-test module arranged on the substrate. The self-test module is configured to receive a loop-back signal indicative of an optical signal output from the photonics device and calibrate the photonics device based on the loop-back signal.

Provided is a light detecting device including a light input device configured to receive light, a plurality of waveguides extending from the light input device, the plurality of waveguides being configured to transmit portions of the light received by the light input device, respectively, a plurality of modulators provided on the plurality of waveguides and configured to modulate phases of the portions of light transmitted in the plurality of waveguides, respectively, at least one graphene layer configured to absorb the portions of light transmitted in the plurality of waveguides, and at least one first electrode and at least one second electrode electrically connected to the at least one graphene layer, respectively.

A semiconductor device includes a cladding layer and a first optical waveguide. The first optical waveguide is formed on the first cladding layer. An end surface of the first optical waveguide is inclined relative to a vertical line perpendicular to an upper surface of the cladding layer.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

An electro-optical conversion system including an opto-mechanical conversion device which includes a ring cavity formed by an optical waveguide which extends along an annular closed curve, a micromechanical resonator that comprises at least one microbeam, and a zipper type element integrated into the ring cavity, the zipper type element including a first arm made on a portion of the ring waveguide and a second arm made on the microbeam. The conversion system also includes a capacitor with first and second electrodes separated by a gap which varies when the microbeam oscillates.

The present disclosure relates to integrated photonics-based optical gyroscopes with silicon nitride (SiN) waveguide-based microresonators. SiN microresonators are fabricated either on a fused silica platform or on a silicon substrate with oxide cladding. A narrow linewidth high-Q laser is hybridly integrated on a silicon photonics platform. The laser is tuned with a first SiN microresonator, and the rotational sensing component of the gyroscope comprises another SiN microresonator. The silicon photonics front-end chip has components for a balanced detection scheme to cancel noise in the optical signal coming back from the rotational sensing component.

A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is Si.sub.1-xGe.sub.x, where x is in the range between 0.2and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

An optical device including: a substrate; an optical waveguide formed at the substrate; and a protective layer formed adjacent to the optical waveguide, wherein the optical waveguide includes multiple side surfaces that intersect the substrate, at least one side surface of the optical waveguide is provided with a rough surface. According to the optical device of the present invention, the light propagation loss can be reduced.

To provide an optical waveguide device in which damage to a thin plate, particularly damage to an optical waveguide, is prevented. An optical waveguide device includes: a thin plate 1 that has an electro-optic effect and that has a thickness of equal to or thinner than 10 μm, an optical waveguide 2 being formed on the thin plate; and a reinforcing substrate that supports the thin plate, in which the thin plate 1 has a rectangular shape in a plan view, a dissimilar element layer 3, in which an element different from an element constituting the thin plate is disposed in the thin plate, is formed on at least a portion between an outer periphery of the thin plate and the optical waveguide 2, and a total length over which a cleavage plane of the thin plate traverses a region where the dissimilar element layer is formed, is equal to or longer than 5% of a width of the thin plate in a short side direction.