Various embodiments of the present disclosure are directed towards a method for forming an integrated chip the method includes forming a waveguide on a first surface of a substrate. A conductive structure is formed at least partially overlying the waveguide. A light pipe structure is formed over the waveguide. A lower surface of the light pipe structure is disposed between a top surface and a bottom surface of the conductive structure. A lower portion of the light pipe structure contacts the conductive structure.

Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.

An optoelectronic chip includes optical inputs having different passbands, a photonic circuit to be tested, and an optical coupling device configured to couple said inputs to the photonic circuit to be tested.

A light receiving device includes, on a substrate, a Si waveguide core provided in a dielectric layer, a first i-type waveguide clad, an i-type core layer, a second i-type waveguide clad, p-type layers disposed on one side of a side surface of a layered structure in a light waveguide direction, the layered structure including the first i-type waveguide clad, the i-type core layer, and the second i-type waveguide clad, n-type layers disposed on the other side, and an electrode on a surface of each of the n-type layers. A width of the Si waveguide core is set to be able to suppress absorption of light in a vicinity of an input edge of the i-type core layer.

Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).

Structures for a coupler and methods of forming a structure for a coupler. A structure for a directional coupler may include a first waveguide core having one or more first airgaps and a second waveguide core including one or more second airgaps. The one or more second airgaps are positioned in the second waveguide core adjacent to the one or more first airgaps in the first waveguide core. A structure for an edge coupler is also provided in which the waveguide core of the edge coupler includes one or more airgaps.

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure includes a first waveguide core having a first arm, a second waveguide core including a second arm, and a third waveguide core having a third arm laterally positioned between the first arm and the second arm. The third arm has a longitudinal axis. The first arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the first arm are laterally adjacent over a first overlap distance. The second arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the second arm are laterally adjacent over a second overlap distance. The first overlap distance is greater than the second overlap distance to provide an overlap offset.

The present invention provides an optical coupler comprising: a first optical prong; a second optical prong; an optical waveguide with which the first optical prong and the second optical prong merge; wherein: a distance from an axially outer tip edge of the first optical prong to an axially outer tip edge of the first optical prong is greater than a planar width of the optical waveguide; and the first optical prong and the second optical prong are each tapered from the optical waveguide.

Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A waveguide core includes a waveguide core section that has a first notched sidewall, a second notched sidewall, and an end surface connecting the first notched sidewall to the second notched sidewall. Segments are positioned with a spaced arrangement adjacent to the end surface of the waveguide core section, and a slab layer is adjoined to the segments, the first notched sidewall of the waveguide core section, the second notched sidewall of the waveguide core section, and the end surface of the waveguide core section. The segments and the waveguide core section have a first thickness, and the slab layer has a second thickness that is less than the first thickness.

A waveguide coupler includes a coupling section which evanescently couples an optical signal, received from an input waveguide, with an absorbing waveguide. Structurally, the coupling section is an elongated waveguide with one end butt-coupled to the input waveguide. Further, the coupling section defines an engagement side edge which is positioned at a predetermined distance from a dimensionally compatible side surface area of the absorbing waveguide. In this combination, evanescence from the optical signal is directed laterally from the coupling section, through the engagement side edge of the coupling section, and through an assisting component, to the absorbing waveguide for use with a photodetector.