A method for manufacturing of a waveguide for guiding an electro-magnetic wave comprising: forming a first waveguide layer, a sacrificial layer and a protection layer on a first wafer, patterning to define a pattern of a first waveguide part and a supporting structure in the first waveguide layer; exposing the sacrificial layer on the first waveguide part while the protection layer still covers the sacrificial layer on the supporting structure; removing the sacrificial layer on the first waveguide part; removing the protection layer; bonding a second wafer to the sacrificial layer of the first wafer such that a second waveguide part is supported by the supporting structure and a gap corresponding to the thickness of the sacrificial layer is formed between the first and second waveguide parts.

A light splitting device includes an optical waveguide body and a dispersion grating. The optical waveguide body is configured to transmit incident light to the dispersion grating, the dispersion grating is configured to disperse the incident light transmitted by the optical waveguide body into a plurality of spectral lines, and the optical waveguide body is further configured to change propagation directions of the plurality of spectral lines and to emit the plurality of spectral lines.

Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide core has a first section, a second section, and a waveguide bend connecting the first section with the second section. The waveguide core includes a first side surface and a second side surface, the first side surface extends about an inner radius of the waveguide bend, and the second side surface extends about an outer radius of the waveguide bend. The waveguide bend includes a central region and a side region that is arranged adjacent to the central region at the first side surface or the second side surface. The central region has a first thickness, and the side region has a second thickness that is less than the first thickness.

Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

Structures that include a Bragg grating and methods of fabricating a structure that includes a Bragg grating. Bragg elements are positioned adjacent to a waveguide. The Bragg elements are separated by grooves that alternate with the Bragg elements. A dielectric layer includes portions positioned to close the grooves to define airgaps. The airgaps are respectively arranged between adjacent pairs of the Bragg elements. The Bragg elements may be used to form the Bragg grating.

Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.

A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.

A method for producing an optical waveguide by: (a) depositing a first composition: (i) a polysiloxane comprising epoxy and alkenyl groups with refractive index no greater than 1.50, (ii) a compound comprising at least one epoxy group and refractive index no greater than 1.49, and (iii) a polysiloxane having refractive index at least 1.50; (iv) a photo acid generator; (v) a hydrosilylation catalyst, (vi) an inhibitor for hydrosilylation; (b) curing by exposure to ultraviolet light; (c) removing the uncured portion to produce a patterned core layer; (d) after a time from 20 to 300 hours depositing a second composition comprising: (i) a polysiloxane comprising epoxy groups with refractive index no greater than 1.49, and (ii) a compound comprising at least two epoxy groups with a refractive index no greater than 1.49 and an alcohol having refractive index no more than 1.45 (iii) at least one photo acid generator.

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes. No adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

A method of fabricating polymer modulators includes forming an insulating layer on a platform and depositing and patterning a ground electrode on the insulating layer. A bottom polymer cladding layer, a first blocking layer, a polymer core layer, a second blocking layer, and a top polymer cladding layer are deposited in order. A third blocking layer is deposited on the top cladding layer and patterned to define vias which are used to etch ground openings through the top polymer cladding layer, the second blocking layer, the core layer, the first blocking layer, and the bottom cladding layer to the ground electrode. The openings are filled with electrically conductive material from electrical communication with the ground electrode to a surface of the top polymer cladding layer. The third blocking layer is removed and electrical contacts are formed on the top polymer cladding layer in electrical communication with the electrically conductive material.