The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

A photonic integrated circuit (PIC) includes an organic solid crystal (OSC) material layer, the OSC material layer having a substrate portion and a raised optical element integral with and extending from the substrate portion. The raised optical element may include a passive or active component of the photonic integrated circuit.

The present invention provides a method for fabricating KTP nonlinear racetrack micro-ring resonator, composed of six steps: KTP wafer processing, ion implantation, electron beam exposure, subsequent processing, reactive ion etching and final processing. A thin-film waveguide structure similar to the on-insulator lithium niobate thin-film can be achieved through only one process of ion implantation, which enables significantly simplified procedure, shortened time, and reduced cost. Meanwhile, the KTP micro-ring resonator produced according to the present invention has an optical damage threshold several times higher than the existing lithium niobate micro-ring resonator. It can output nonlinear frequency converted light to the power of milliwatts, and suitable for the case where both the input and output optical signals are pulsed lasers. Since Ion implantation, electron beam exposure, metal evaporation deposition, and reactive ion etching are all relatively developed micro-nano machining technologies, the present invention has wonderful operability and repeatability.

A probe structure includes a monolithically integrated waveguide and lens. The probe is based on SU-8 as a guiding material. A waveguide mold is defined using wet etching of silicon using a silicon dioxide mask patterned with 45° angle with respect to the silicon substrate edge and an aluminum layer acting as a mirror is deposited on the silicon substrate. A lens mold is made using isotropic etching of the fused silica substrate and then aligned to the silicon substrate. A waveguide polymer such as SU-8 2025 is flowed into the waveguide mask+lens mold (both on the same substrate) by decreasing its viscosity and using capillary forces via careful temperature control of the substrate.

A photonic structure is provided. The photonic structure includes a semiconductor substrate, and an oxide structure embedded in the semiconductor substrate, and an optical coupling region directly above the buried oxide layer. A side surface of the oxide structure is exposed from an edge of the semiconductor substrate. The optical coupling region is tapered to a terminus of the optical coupling region at the edge of the semiconductor substrate.

A method of forming an optical device includes forming a waveguide mask on a device precursor. The device precursor includes a waveguide positioned on a base. The method also includes forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base. The method also includes removing a portion of the base while the facet mask protects a facet of the waveguide.

An optical system may include a substrate that includes an etched region and a laser-induced breakage region. The optical system may further include an optical waveguide disposed on the substrate. The optical system may further include an optical device coupled to the optical waveguide within the etched region. The laser-induced breakage region may produce a predetermined coupling gap between the optical waveguide and the optical device.

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.