The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material

A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

A device of collimation of a light beam including a monomode waveguide, a first element of collimation of the light beam parallel to a first plane and a second element of collimation of the light beam parallel to a second plane, the first collimation element coupling the waveguide to the second collimation element.

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.

An optical waveguide is formed on a support member. A second cladding layer is formed on a surface of a first cladding layer so as to cover a core layer. An opening is opened at the second cladding layer-side, penetrates the second cladding layer and the core layer, and closed at the first cladding layer-side. The opening has a first surface and a second surface ranging from the opened side to the closed side. In a vertical section taken along a longitudinal direction of the core layer, a first angle between a perpendicular line drawn from an opening end of the first surface to the surface of the first cladding layer and the first surface, and a second angle between a perpendicular line drawn from an opening end of the second surface to the surface of the first cladding layer and the second surface are all acute angles.

A semiconductor integrated optical device includes a waveguide mesa having a first multilayer including a first core layer, a second multilayer including a second core layer, and a butt joint interface between the first core layer and the second core layer; a support having first to third regions; and a buried semiconductor region provided on the support. The first multilayer has a first mesa width on the first region. The second multilayer has a second mesa width on the second region. On the third region, the second multilayer has a waveguide portion having a third mesa width smaller than the first and the second mesa widths. The second core layer has a waveguide core thickness on the second region. In the waveguide portion, the second core layer has a core portion having a thickness different from the waveguide core thickness at a position away from the butt-joint interface.

An optical waveguide is formed on a support member. A second cladding layer is formed on a surface of a first cladding layer so as to cover a core layer. An opening is opened at the second cladding layer-side, penetrates the second cladding layer and the core layer, and closed at the first cladding layer-side. The opening has a first surface and a second surface ranging from the opened side to the closed side. In a vertical section taken along a longitudinal direction of the core layer, a first angle between a perpendicular line drawn from an opening end of the first surface to the surface of the first cladding layer and the first surface, and a second angle between a perpendicular line drawn from an opening end of the second surface to the surface of the first cladding layer and the second surface are all acute angles.

A semiconductor device includes a substrate having a first surface and a second surface that have top and back relation, an insulating layer formed on the first surface of the substrate, and an optical waveguide formed on the insulating layer and formed of a semiconducting layer. A first opening is formed on the second surface of the substrate. The first opening overlaps the optical waveguide in plan view.