Various embodiments of the present technology provide a novel architecture for optical frequency conversion in a waveguide which can be applied to any suitable nonlinear waveguide material and any wavelength. In accordance with some embodiments, phase-matched bends can be used to increase the nonlinear interaction length. For example, the device can begin with a straight waveguide section with a width designed for phase-matching. When the straight waveguide section approaches the end of the chip, a bending waveguide section allows the waveguide to meander back in the opposite direction. Various embodiments of the bend can have a wider or narrower width to eliminate phase-matching for second harmonic generation (SHG) and instead provide a 2 phase-shift between the pump and signal light. Therefore, at the end of the bend, the pump and signal light are in-phase and a phase-matched width will continue the SHG process.

A semi-finished product having a substrate with a first side and an opposite second side is provided, wherein at least one diamond layer is arranged on the first side, wherein the diamond layer comprises monocrystalline diamond and the substrate comprises a material different from the diamond layer. A method for producing such a semi-finished product is provided and an integrated optical component may be produced from the semi-finished product.

A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.

Various embodiments of the present technology provide a novel architecture for optical frequency conversion in a waveguide which can be applied to any suitable nonlinear waveguide material and any wavelength. In accordance with some embodiments, phase-matched bends can be used to increase the nonlinear interaction length. For example, the device can begin with a straight waveguide section with a width designed for phase-matching. When the straight waveguide section approaches the end of the chip, a bending waveguide section allows the waveguide to meander back in the opposite direction. Various embodiments of the bend can have a wider or narrower width to eliminate phase-matching for second harmonic generation (SHG) and instead provide a 2 phase-shift between the pump and signal light. Therefore, at the end of the bend, the pump and signal light are in-phase and a phase-matched width will continue the SHG process.

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

A photonic structure and a method for manufacturing the same are provided. The photonic structure includes a substrate, an insulating structure, a first waveguide layer, a second waveguide layer and a high-dielectric constant material. The insulating structure is located over the substrate. The first waveguide layer is embedded in the insulating structure. The second waveguide layer is embedded in the insulating structure and longitudinally spaced apart from the first waveguide layer. The high-dielectric constant material is disposed between the first waveguide layer and the second waveguide layer.

An optical device includes a first waveguide having a longitudinal axis and a first end facet inclined at a non-normal angle to the longitudinal axis, and a second waveguide, which has a second end facet and is fixed with the second end facet in proximity to and parallel with the first end facet. An actuator is coupled to move the first end facet of the first waveguide in a direction transverse to the longitudinal axis between a first position in which a distance between the first and second end facets is less than 25 nm, and a second position in which the distance between the first and second end facets is greater than 300 nm.

An optical waveguide is formed on a support member. A second cladding layer is formed on a surface of a first cladding layer so as to cover a core layer. An opening is opened at the second cladding layer-side, penetrates the second cladding layer and the core layer, and closed at the first cladding layer-side. The opening has a first surface and a second surface ranging from the opened side to the closed side. In a vertical section taken along a longitudinal direction of the core layer, a first angle between a perpendicular line drawn from an opening end of the first surface to the surface of the first cladding layer and the first surface, and a second angle between a perpendicular line drawn from an opening end of the second surface to the surface of the first cladding layer and the second surface are all acute angles.

Described herein is an integrated photonics device including a light emitter, integrated edge outcoupler(s), optics, and a detector array. The device can include a hermetically sealed enclosure. The hermetic seal can reduce the amount of moisture and/or contamination that may affect the measurement, analysis, and/or the function of the individual components within the sealed enclosure. Additionally or alternatively, the hermetic seal can be used to protect the components within the enclosure from environmental contamination induced during the manufacturing, packaging, and/or shipping process. The outcoupler(s) can be formed by creating one or more pockets in the layers of a die. Outcoupler material can be formed in the pocket and, optionally, subsequent layers can be deposited on top. The edge of the die can be polished until a targeted polish plane is achieved. Once the outcoupler is formed, the die can be flipped over and other components can be formed.

An optical device includes a first waveguide having a longitudinal axis and a first end facet inclined at a non-normal angle to the longitudinal axis, and a second waveguide, which has a second end facet and is fixed with the second end facet in proximity to and parallel with the first end facet. An actuator is coupled to move the first end facet of the first waveguide in a direction transverse to the longitudinal axis between a first position in which a distance between the first and second end facets is less than 25 nm, and a second position in which the distance between the first and second end facets is greater than 300 nm.