There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

A photonic integrated circuit (PIC) includes an organic solid crystal (OSC) material layer, the OSC material layer having a substrate portion and a raised optical element integral with and extending from the substrate portion. The raised optical element may include a passive or active component of the photonic integrated circuit.

The present invention discloses an high-contrast photonic crystal “OR”, “NOT” and “XOR” logic gate, comprising a six-port two-dimensional photonic crystal, a nonlinear cavity unit and a cross-waveguide logic gate unit; the high-contrast photonic crystal “OR” logic gate includes a first reference-light input port, two first idle ports, two first signal-input ports and a first signal-output port; the high-contrast photonic crystal “NOT” logic gate includes two second reference-light input ports, two second idle ports, a second signal-input port and a second signal-output port; and the high-contrast photonic crystal “XOR” logic gate includes a three reference-light input port, two three-idle ports, two three-signal input ports and a three-signal output port; the cross-waveguide logic gate unit is arranged with different input or output ports; and the nonlinear cavity unit is coupled with the cross-waveguide logic gate unit. The structure of the present invention is easy to integrate with other optical logic elements.

A loss-based wavelength meter includes a first photodiode configured to measure power of monochromatic light; and a loss section having a monotonic wavelength dependency, wherein a wavelength of the monochromatic light is determined based on measurements of the first photodiode after the monochromatic light has gone through the loss section. This provides a compact implementation that may be used in integrated optics devices using silicon photonics as well as other embodiments.

In one aspect, a photonic device includes a substrate layer comprising magnesium fluoride and an optical guiding layer disposed on the substrate layer. The optical guide layer includes silicon dioxide. The substrate layer and the optical guide layer are transparent at an ultraviolet and visible wavelength range. In another aspect, a method includes oxidizing silicon to form a silicon dioxide layer, bonding the silicon dioxide layer to magnesium fluoride, removing the silicon and performing lithography and etching of the silicon dioxide to form a photonic device.

Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

An optical device may include at least two waveguides with different propagation constants. Each waveguide is associated with a grating antenna with a grating period selected to emit light at the same emission angle despite the different propagation constants. Each waveguide may be part of an optical path that includes phase shifters. Additionally, the waveguides may be formed in a waveguide layer that is separate from a perturbation layer in which the grating antennas as formed.

Some embodiments are directed to a method for manufacturing photonic waveguides and to photonic waveguides manufactured by this method.

An optical multi-mode HIC (high index contrast) waveguide (102, 104, 201, 301) for transporting electromagnetic radiation in the optical waveband, the waveguide comprising a guiding core portion (204) with higher refractive index, and cladding portion (206) with substantially lower refractive index configured to at least partially surround the light guiding core in the transverse direction to facilitate confining the propagating radiation within the core, the waveguide being configured to support multiple optical modes of the propagating radiation, wherein the waveguide incorporates a bent waveguide section (202) having bend curvature that is configured to at least gradually, preferably substantially continuously, increase towards a maximum curvature of said section from a section end.