A micro-ring resonator includes: at least one first straight waveguide; a second waveguide (Arm3) and a third waveguide (Arm2), where the second waveguide (Arm3) and the third waveguide (Arm2) form a closed annular waveguide, and the annular waveguide is coupled to the first waveguide; a fourth waveguide (Arm1), where the fourth waveguide (Arm1) is coupled to the annular waveguide; and a polarization splitter (PS), where one end of the polarization splitter (PS) is connected to the fourth waveguide (Arm1), and one end is connected to the second waveguide (Arm3) in the annular waveguide. In the micro-ring resonator, a distance between two waveguides for separately transmitting different polarized light breaks a limitation of a resonator radius, and further, a distance between a TE path and a TM path is reduced.

A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

A novel electro-optic optical modulator device and a related method for creating the novel optical modulator device are disclosed. In one embodiment, the novel optical modulator comprises a high index contrast optical waveguide, a mesa region, electrical modulation electrodes, RF transmission lines, and interconnection layers. The high index contrast optical waveguide comprises an electro-optic slab core region and a high index ridge core region. A mesa section which includes the core regions can be formed, and electrical modulation electrodes are placed on etched sidewalls of the mesa section to achieve electro-optical index modulation of the electro-optic slab core region. The RF transmission lines include RF electrodes that connected to the electrical modulation electrodes. The interconnection layers connect the modulation electrodes with the RF electrodes by using etched vias. The novel optical modulator can also incorporate foldable modulation arms for poling in the electro-optic slab core region.

A novel optical assembly apparatus for coupling optical energy and a related method for creating the novel optical assembly apparatus are disclosed. In one embodiment, the novel optical assembly apparatus includes a high-index contrast waveguide constructed on a semiconductor die or another base substrate with an aligned optical coupling section, a grating coupler etched onto a surface, a micro mirror with an acute angle relative to the surface, and a waveguide taper that narrows an optical beam width. A light ray entered into the optical coupling section is redirected by the micro mirror to form a perpendicular ray entry angle with the grating coupler. The grating coupler then efficiently couples the light ray with the waveguide taper, which in turn narrows the optical beam width. The light ray may originate from a semiconductor die or from an optical fiber, which is purposefully aligned with the high-index contrast waveguide.

A novel waveguide with excellent optical properties can be easily produced. The photonic nanowires based waveguide has a) a plurality of nanowires; each nanowire having a ridge shape; b) the nanowires are supported by a support substrate or partially or totally free standing; c) the support substrate further supports interfacing waveguides disposed on both sides of the plurality of nanowires. The special concept of present invention allows to align a number of ridge-shaped nanowire that enables to control the amount of light being outside the solid waveguide in the evanescence field. Further, the design is compatible with solid waveguides and offers the possibility to confine (guide the light) within a multiple waveguide arrangement.

A two-dimensional square lattice photonic crystal having cross-shaped connecting rods and rotating square rods. The two-dimensional square lattice photonic crystal comprises a high refractive index dielectric cylinder and a low refractive index background dielectric cylinder. The photonic crystal structure is formed by cells in square lattice arrangement. The cells of the square lattice photonic crystal are composed of high refractive index rotating square rods, cross-shaped planar dielectric rods and background dielectrics. The high refractive index rotating square rods are connected to the cross-shaped planar dielectric rods. The lattice constant of the square lattice photonic crystal is a, the side length d of each rotating square cylinder is O.SIa to 0.64a, the rotation angle of each rotating square cylinder rod is 2.300 to 87.70, and the width t of each cross-shaped planar dielectric rod is 0.032a to 0.072 a. The distance G of the cross-shaped planar dielectric rods that move, from bottom to top and from left to right within a lattice period relative to the rotating square rods is 0.4a to 0.6a. According to the photonic crystal structure, the integration level of a light path can be provided easily, and a large absolute forbidden band can be achieved.

A method for packaging a semiconductor structure, a packaging structure, and a chip. The method includes: forming the semiconductor structure on a SOI chip, where the semiconductor structure includes an edge coupler or a cavity structure; forming, through PECVD, silicon oxide on a surface of the semiconductor structure, where the surface is provided with an opening of a trench; and performing subsequent packaging. A characteristic of low step coverage of the PECVD is utilized for sealing an opening of a trench of the semiconductor structure, and addressed is an issue of a device failure due to the trench blocked by a packaging material in subsequent packaging.

A polarization splitter and rotator device includes an optical mode converter comprising a first optical waveguide, wherein a core of the first optical waveguide is asymmetrically shaped; and an output coupler comprising a second optical waveguide coupled to the first optical waveguide and a third optical waveguide adiabatically coupled to the second optical waveguide, the adiabatically coupling provoking the polarized light coupled from the first optical waveguide into the second optical waveguide to spread its power between the second optical waveguide and the third optical waveguide by coupling its transverse electric mode of first order as transverse electric mode of zeroth order into the third optical waveguide and keeping its transverse electric mode of zeroth order propagating in the second optical waveguide without coupling to the third optical waveguide.

A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.

An assembly of waveguide wavelength multiplexers and demultiplexers, together with continuous wave (CW) laser transmitters that interface to grating couplers on a silicon photonics chip, providing CW sources, multiplexed output and optionally multiplexed input, all using a single photonic lightwave circuit (PLC).