The present invention provides a sensor having, one or more optical slab waveguides having one or more target regions. The target regions may interact with gas molecules or trap, entrain or capture one or more targets of interest. The optical slab waveguides are adapted to receive one or more input optical beams from one or more light sources to create a plurality of propagating optical waves in optical slab waveguide. The propagating optical waves interact with said one or more target regions to create an optical output wavefront that may be in the form of a diffraction pattern. The target regions may be functionalized with an antibody, polymer, cell, tissue, or biological material.

An embodiment optical body is provided in a propagation path of light between a Si waveguide and an optical fiber. The optical body changes a course of some of radiation mode light, which is emitted from the Si waveguide and propagates in a direction away from an optical axis thereof, to obtain waveguide mode light passing through itself. Thus, the amount of waveguide mode light incident on the optical fiber increases, and the coupling efficiency between the Si waveguide and the optical fiber is improved.

A ring-resonator filter device includes: a waveguide device that includes a core. Further, the core constitutes two ring resonator filters, each of the two ring resonator filters includes two arm portions, a ring-shaped portion, and two optical coupling/branching portions that optically couple the two arm portions and the ring-shaped portion, respectively, and the two ring-shaped portions cross each other.

A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.

A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.

In an optical waveguide element, performance deterioration due to recoupling of unnecessary light leaking from an optical waveguide with the optical waveguide is prevented. An optical waveguide element includes an optical substrate on which an optical waveguide is formed, and a support substrate that is bonded to the optical substrate, on a bonded surface of the support substrate bonded to the optical substrate, a recess portion along the optical waveguide on the optical substrate is formed directly under the optical waveguide, a portion of the support substrate from an upper surface of the support substrate to at least a depth of a bottom surface of the recess portion has a refractive index higher than a substrate refractive index of the optical substrate, and the recess portion is filled with a substance having a refractive index lower than the substrate refractive index.

An optical mode-size converter is presented, which includes a guiding portion, wherein at least a portion of the guiding portion extends between a first end and a second end along a first path, a first strip with a first refractive index, and a second strip with a second refractive index. The first strip and the second strip are embedded within the guiding portion extending along the first path such that a first optical mode received at the first end reaches the first strip before the second strip and such that the second strip extends to the second end. The first refractive index and the second refractive index are higher than a refractive index of the guiding portion, and a section of the first strip and a section of the second strip overlap to form an evanescent coupling region, such that converter is responsive to a first optical mode received at the first end to convert the first optical mode into a second optical mode with a smaller mode size along the first path towards the second end.

A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.

The optical waveguide component of the present disclosure provides a configuration for optically connecting two optical waveguides composed of different materials with low loss. The first optical circuit including the core of a first material and a second optical circuit including a core of a second material are configured on a single substrate. The optical waveguide component of the present disclosure includes an optical connection part between two optical circuits, and has a double structure in which a core cross-sectional region of one optical waveguide is included in a core cross-sectional region of the other optical waveguide between the two optical waveguides. The optical connection part is provided with a protrusion part of the underclad extending along the first core from the high-level surface toward the low-level surface of the underclad toward, and the width of the protrusion part is gradually narrowed toward the second optical circuit.

Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.