G02B6/124

Semiconductor structure and manufacturing method of the same

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.

Semiconductor structure and manufacturing method of the same

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.

Information Display Device and Information Display Method
20190379868 · 2019-12-12 ·

An information display device includes a spatial light modulator, configured to emit a holographic three-dimensional light field to a first grating, where the holographic three-dimensional light field corresponds to at least two focal planes, the first grating, configured to deflect the holographic three-dimensional light field emitted by the spatial light modulator, so that the holographic three-dimensional light field is propagated along a first direction and transmitted into an optical waveguide, the optical waveguide, configured to receive the holographic three-dimensional light field transmitted from the first grating, and propagate the holographic three-dimensional light field in the optical waveguide, and a second grating, configured to deflect the holographic three-dimensional light field that is propagated in the optical waveguide.

Method of making a metal grating in a waveguide and device formed

A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material.

Method of making a metal grating in a waveguide and device formed

A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material.

Photosensitive module, photosensitive device and display panel

A photosensitive module includes a plurality of photosensitive cells. Each of the photosensitive cells includes a selective light director having a first surface including a light entry region and a light exit region different from the light entry region, the selective light director being configured to selectively direct a collimated portion of light incident towards the light entry region to the light exit region to exit from the selective light director; and a photoelectric converter arranged in the light exit region and having a light receiving surface facing the light exit region to receive the collimation portion of the light exiting from the selective light director.

FABRICATING NON-UNIFORM DIFFRACTION GRATINGS
20190369310 · 2019-12-05 ·

A method of fabricating non-uniform gratings includes implanting different densities of ions into corresponding areas of a substrate, patterning, e.g., by lithography, a resist layer on the substrate, etching the substrate with the patterned resist layer, and then removing the resist layer from the substrate, leaving the substrate with at least one grating having non-uniform characteristics associated with the different densities of ions implanted in the areas. The method can further include using the substrate having the grating as a mold to fabricate a corresponding grating having corresponding non-uniform characteristics, e.g., by nanoimprint lithography.

WEDGE-SHAPED FIBER ARRAY ON A SILICON-PHOTONIC DEVICE AND METHOD FOR PRODUCING THE SAME
20190371945 · 2019-12-05 ·

A method of forming a wedge-shaped fiber array and a bottom base according to a probing pad layout of a Si-Photonic device to enable optical, DC and RF mixed signal tests to be performed at the same time and the resulting device are provided. Embodiments include a bottom base; and a fiber array with sidewalls and a top surface having a first angle and a second angle, respectively, over the bottom base, wherein the fiber array is structured to expose bond pads of a Si-Photonic device during wafer level Si-Photonic testing.

GRATING COUPLERS WITH MULTIPLE CONFIGURATIONS
20190369309 · 2019-12-05 ·

The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.

GRATING COUPLERS WITH MULTIPLE CONFIGURATIONS
20190369309 · 2019-12-05 ·

The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.