The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

A III-V optoelectronic light emitting device is epitaxially formed on a semiconductor on insulator substrate over a buried waveguide core. The device is optically coupled to the underlying waveguide core. A MOSFET device is formed on a semiconductor substrate beneath the insulator that contains the waveguide core.

The present disclosure relates to semiconductor structures and, more particularly, to three dimensional (3D) optical interconnect structures and methods of manufacture. The structure includes: a first structure having a grating coupler and a first optical waveguide structure; and a second structure having a second optical waveguide structure in alignment with the first optical waveguide structure and which has a modal effective index that matches to the first optical waveguide structure.

The present disclosure relates to semiconductor structures and, more particularly, to three dimensional (3D) optical interconnect structures and methods of manufacture. The structure includes: a first structure having a grating coupler and a first optical waveguide structure; and a second structure having a second optical waveguide structure in alignment with the first optical waveguide structure and which has a modal effective index that matches to the first optical waveguide structure.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Embodiments described herein relate to encapsulated nanostructured optical devices and methods of encapsulating gratings of such devices by asymmetric selective physical vapor deposition (PVD). In some embodiments, a method for encapsulating optical device gratings includes a first PVD process and a second PVD process that may be carried out simultaneously or sequentially. The first PVD process may provide a first stream of material at a first angle non-perpendicular to a substrate of the grating. The second PVD process may provide a second stream of material at a second angle non-perpendicular to the substrate of the grating. The combination of the first PVD process and the second PVD process forms an encapsulation layer over the grating and one or more air gaps between adjacent fins of the grating.

An optical waveguide comprises one or more upstream diffraction gratings in addition to overlapping first and second downstream diffraction gratings. The one or more upstream diffraction gratings include a first upstream diffraction grating configured to receive display light and to release the display light expanded along a first axis. The first and second downstream diffraction gratings are configured to receive the display light expanded along the first axis and to cooperatively release the display light further expanded along a second axis. The first downstream diffraction grating is arranged on a planar face of the optical waveguide and is further configured to further expand along the first axis the display light expanded along the first axis.