Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.

An optical waveguide interferometer that includes a first optical section, a second optical section, and a set of optical waveguides configured to connect the first and second optical sections, such that light propagating between the first optical section and the second optical section passes through each optical waveguide in the set, wherein the set of optical waveguides includes a first optical waveguide having a first length and a first width and a second optical waveguide having a second length and a second width, wherein the second length is greater than the first length, and the second width is greater than the first width.

A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region having a first doping type disposed in a semiconductor substrate. A second doped region having a second doping type different than the first doping type is disposed in the semiconductor substrate and laterally spaced from the first doped region. A waveguide structure is disposed in the semiconductor substrate and laterally between the first doped region and the second doped region. A photodetector is disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region. The waveguide structure is configured to guide one or more photons into the photodetector. The photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector. The photodetector has a lower surface that continuously arcs between the opposite sidewalls of the photodetector.

An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

A photodiode which includes a core of a first waveguide that terminates in a tapered termination that extends above a core, made of germanium or of SiGe, of a second waveguide, a matching strip that extends opposite the tapered termination on one side and opposite the core of the second waveguide on the opposite side, this matching strip being coupled optically to the core of the second waveguide by an evanescent coupling and including a first zone inside which its effective propagation index is equal to the effective propagation index of a second zone of the tapered termination, these first and second zones optically coupling the tapered termination to the matching strip through a modal coupling, and a low-index layer that extends between the matching strip and the tapered termination.

To reduce or eliminate crosstalk between adjacent integrated optical waveguides, an embodiment of an integrated structure includes, between the optical waveguides, a metal isolation region configured to redirect a signal leaking from one waveguide away from the other waveguide, to absorb the leaking signal, or both to redirect and absorb respective portions of the leaking signal. For example, such an integrated structure includes a cladding, first and second optical cores, and a metal isolation region. The optical cores are disposed in the cladding, and the isolation region is disposed in the cladding between, and separate from, the cores. Including a metal isolation region between adjacent optical waveguides can reduce crosstalk between the waveguides more than coating the waveguides with a metal because the metal coating typically is not thick enough to redirect or absorb enough of a leakage signal to reduce crosstalk to a suitable level.

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Integrated-optics systems are presented in which an optically active device is optically coupled with a silicon waveguide via a passive compound-semiconductor waveguide. In a first region, the passive waveguide and the optically active device collectively define a composite waveguide structure, where the optically active device functions as the central ridge portion of a rib-waveguide structure. The optically active device is configured to control the vertical position of an optical mode in the composite waveguide along its length such that the optical mode is optically coupled into the passive waveguide with low loss. The passive waveguide and the silicon waveguide collectively define a vertical coupler in a second region, where the passive and silicon waveguides are configured to control the distribution of the optical mode along the length of the coupler, thereby enabling the entire mode to transition between the passive and silicon waveguides with low loss.

Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.