The present application relates to the technical field of circuit boards. In particular, disclosed are an optical fiber circuit board assembly and an electro-optical circuit board. The optical fiber circuit board assembly comprises a substrate, which comprises a substrate body, the substrate body at least being provided with a first window; and a plurality of optical fiber units, which are arranged on the substrate, wherein one end of each of the plurality of optical fiber units extends to the first window and is used for being coupled to a plurality of optical devices, and the other end of each of the plurality of optical fiber units extends to the outside of the substrate. By the means, according to the present application, the assembly of optical interconnection and electrical interconnection can be simplified, thereby greatly improving efficiency.

A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Multicore fibers and endoscope configurations are provided, along with corresponding production and usage methods. Various configurations include an adiabatically tapered proximal fiber tip and/or proximal optical elements for improving the interface between the multicore fiber and the sensor, photonic crystal fiber configurations which reduce the attenuation along the fiber, image processing methods and jointed rigid links configurations for the endoscope which reduce attenuation while maintaining required flexibility and optical fidelity. Various configurations include spectral multiplexing approaches, which increase the information content of the radiation delivered through the fibers and endoscope, and configurations which improve image quality, enhance the field of view, provide longitudinal information. Various configurations include fiber-based wave-front sensors. Many of the disclosed configurations increase the imaging resolution and enable integration of additional modes of operation while maintain the endoscope very thin, such as spectral imaging and three dimensional imaging.

A “lab on a chip” includes an optofluidic sensor and components to analyze signals from the optofluidic sensor. The optofluidic sensor includes a substrate, a channel at least partially defined by a portion of a layer of first material on the substrate, input and output fluid reservoirs in fluid communication with the channel, at least a first radiation source coupled to the substrate adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent and below the channel.

An optical fiber holding structure includes: a structure main body having a prismatic shape; a through hole into which an optical fiber is inserted; a protruding portion having a columnar shape projecting from the structure main body and configured to be inserted into an opening portion of a substrate; and a contact portion configured to abut on a surface of the substrate to position an optical element and the optical fiber at a predetermined distance. The through hole is formed so as to penetrate from a surface of the structure main body through which the optical fiber is inserted to an end surface of the protruding portion, and at least one side surface of the structure main body is flush with at least one side surface of the protruding portion.

A semiconductor package includes a semiconductor die, a device layer, an insulator layer, a buffer layer, and connective terminals. The device layer is stacked over the semiconductor die. The device layer includes an edge coupler located at an edge of the semiconductor package and a waveguide connected to the edge coupler. The insulator layer is stacked over the device layer and includes a first dielectric material. The buffer layer is stacked over the insulator layer. The buffer layer includes a second dielectric material. The connective terminals are disposed on the buffer layer and reach the insulator layer through contact openings of the buffer layer.

A light detection and ranging apparatus (LIDAR) includes at least one waveguide including a first cladding layer having a first refractive index and a second cladding layer having multiple second refractive indexes to expand an optical mode of an optical beam propagating within the waveguide. The second refractive indexes include a gradient of refractive indexes and the first refractive index is less than the second refractive indexes.

Various techniques are provided for manufacturing an optical connector. In one example, a technique may include applying an optical adhesive to a first end of the optical fiber, translating the optical fiber towards a lens to at least partially adhere the end of the optical fiber to the lens by the optical adhesive, and suspending the lens from the optical fiber to align a center of gravity of the lens with an optical path of the optical fiber to maintain optical beam power loss below a power loss threshold. Additional methods, systems, and apparatus are also provided.

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.