A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

A method includes receiving input light having an input wavelength in a first optical resonator for causing resonance of the input light in the first optical resonator. The first optical resonator includes a non-linear optical medium. The method also includes converting at least a portion of the input light to a combination of first output light having a first output wavelength that is different from the input wavelength and second output light having a second output wavelength that is different from the input wavelength and the first output wavelength by passing the input light through the non-linear optical medium. The method further includes causing resonance of the first output light and the second output light in a second optical resonator. A portion of the first optical resonator is coupled to a portion of the second optical resonator.

Provided is an optical device including a radio frequency (RF) signal source configured to electrically provide an RF signal, a first diode configured to operate as a laser diode (LD) or an electro-absorption modulator (EAM) in response to the RF signal, a second diode configured to share an N region of the first diode, be serially connected to the first diode, and have a P region connected to a ground to operate as a capacitor for series push-pull operation with the first diode, and a resistor connected between the N region and the ground.

Photonic devices including a distributed Bragg reflector (DBR) having a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.

A method includes receiving input light having an input wavelength in a first optical resonator for causing resonance of the input light in the first optical resonator. The first optical resonator includes a non-linear optical medium. The method also includes converting at least a portion of the input light to a combination of first output light having a first output wavelength that is different from the input wavelength and second output light having a second output wavelength that is different from the input wavelength and the first output wavelength by passing the input light through the non-linear optical medium. The method further includes causing resonance of the first output light and the second output light in a second optical resonator. A portion of the first optical resonator is coupled to a portion of the second optical resonator.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.