G02F1/01716

Electro-optical modulator and methods of formation thereof
11327346 · 2022-05-10 · ·

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

PHOTONIC DEVICES

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

Photonic devices

Photonic devices having a photonic waveguiding layer, and a cladding layer, disposed on the photonic waveguiding layer, and where the cladding section is a material comprising Scandium. The cladding layer may include a material comprising Al.sub.1-xSc.sub.xN material where 0<x≤0.45.

PHOTONIC DEVICES

Photonic devices including a distributed Bragg reflector (DBR) having a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers.

QUANTUM SIMULATION WITH TRAPPED IONS IN A GRADIENT FIELD

Method and apparatus for quantum simulation, based on a linear chain of ions. A gradient field is imposed to break the symmetry of the ion chain, and bichromatic driving fields are applied to bridge the energy gaps induced by the gradient field and thereby establish resonance couplings among the ions according to their relative positions in the gradient field. The combination of the gradient field and the bichromatic driving fields implement excitation hopping to simulate a variety of topologies according to higher¬dimensional Hamiltonians and boundary conditions, including ring, torus, Mobius strip configurations, as well as topologies with periodic boundary conditions. In particular synthetic gauge fields allow simulation of magnetic flux.

QUANTUM DOTS AND DEVICES INCLUDING THE SAME

A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

ELECTRO-OPTICAL MODULATOR AND METHODS OF FORMATION THEREOF
20220252912 · 2022-08-11 ·

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

Quantum confined nanostructures with improved homogeneity and methods for making the same

A method that includes: providing a substrate including a layer of a crystalline material having a first surface; and exposing the first surface to an environment under conditions sufficient to cause epitaxial growth of a layer of a deposition material on the first surface, wherein exposing the first surface to the environment includes illuminating the substrate with light at a first wavelength while causing the epitaxial growth of the layer of the deposition material. The first surface includes one or more discrete growth sites at which an epitaxial growth rate of the quantum confined nanostructure material is larger than areas of the first surface away from the growth sites by an amount sufficient so that the deposition material forms a quantum confined nanostructure at each of the one or more discrete growth sites.

PHOTONIC DEVICES

Photonic devices having a photonic waveguiding layer, and a cladding layer, disposed on the photonic waveguiding layer, and where the cladding section is a material comprising Scandium. The cladding layer may include a material comprising Al.sub.1-xSc.sub.xN material where 0<x≤0.45.

PHOTONIC DEVICES

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.