A modulator assembly for modulating light comprising a first and a second electro-absorption modulator which each at least substantially only act on a polarization component of incident light; a light generating assembly for generating light which includes a first and a second polarization component; a first electro-absorption modulator for modulating the light generated by the light generating assembly, wherein the first electro-absorption modulator at least substantially only modulates the first polarization component of the light, so that the light exiting from the first electro-absorption modulator includes a modulated and an unmodulated polarization component; a polarization converter for changing the polarization direction of the light exiting from the first electro-absorption modulator. The light exiting from the polarization converter couples into the second electro-absorption modulator and is polarized such that by means of the second electro-absorption modulator a modulation at least substantially is effected only of the previously unmodulated polarization component.

Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.

A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.

A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.

A sensing substrate including a substrate, a quantum well structure, a sensing surface and metal nanoparticles is provided. The quantum well structure is disposed on the substrate, and the quantum well structure includes at least one first metal nitride layer and second metal nitride layers. The first metal nitride layers and the second metal nitride layers are stacked on the substrate in alternation manner. The quantum well structure is located between the sensing surface and the substrate. The metal nanoparticles are disposed on the sensing surface, and the sensing surface is a rough surface. A manufacturing method of the sensing substrate and a sensor are also provided.

A sensing substrate including a substrate, a quantum well structure, a sensing surface and metal nanoparticles is provided. The quantum well structure is disposed on the substrate, and the quantum well structure includes at least one first metal nitride layer and second metal nitride layers. The first metal nitride layers and the second metal nitride layers are stacked on the substrate in alternation manner. The quantum well structure is located between the sensing surface and the substrate. The metal nanoparticles are disposed on the sensing surface, and the sensing surface is a rough surface. A manufacturing method of the sensing substrate and a sensor are also provided.

An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x0.45 and 0y1.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x0.45 and 0y1.

Colloidal quantum wells have discrete energy states and electrons in the quantum wells undergo interband and intersubband state transitions. The transmissivity of a colloidal quantum well may be tuned by actively controlling the states of the colloidal quantum wells enabling ultrafast optical switching. A primary excitation source is configured to provide a primary excitation to promote a colloidal quantum well from a ground state to a first excitation state. A secondary excitation source is configured to provide a secondary excitation to the colloidal quantum well to promote the colloidal quantum well from the first excitation state to the second excitation state with the first and second excitation states being subbands in the conduction band of the colloidal quantum well.