A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3 V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

A thin-plate LN optical control device includes: a thin-plate LN optical waveguide element which includes an optical waveguide formed by thermal diffusion of Ti in a substrate made of lithium niobate, and a control electrode that is formed on the substrate and is configured to control a light wave propagating through the optical waveguide, and in which at least a part of the substrate is thinned; and a housing that accommodates the thin-plate LN optical waveguide element in an air-tight sealing manner. Oxygen is contained in a filler gas inside the housing.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

An optical device is described. This optical device includes an electro-optical material having an X-cut, Y-propagate orientation. In particular, a Y crystallographic direction of the electro-optical material is parallel to an optical waveguide defined in the electro-optic material and an X crystallographic direction of the electro-optical material is parallel to a vertical direction of the optical device. By applying drive signals having an angular frequency to the electo-optic material, the optical device may perform modulation, corresponding to a traveling-wave configuration, of an optical signal based at least in part on the drive signals. where the modulation involves a polarization conversion and a frequency shift. The angular frequency of the drive signals may be selected to approximately cancel electro-optic cross terms in X-Z plane of the electro-optical material. Moreover, an amplitude of the drive signals may be selected so that the optical device emulates a half-wave-plate configuration.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

Non-classical light is generated from classical light by providing a non-classical light generation stage with at least one waveguide; inputting classical light into the non-classical light generation stage; and converting at least part of the classical light into non-classical light. The classical light is in a non-fundamental propagation mode of a waveguide of the non-classical light generation stage, and the non-classical light is in a fundamental propagation mode a waveguide of the non-classical light generation stage. The converting does not involve quasi-phase-matching. An input adaptation stage obtains classical light for input into the non-classical light generation stage. In the input adaptation stage, classical light is converted into classical light of a different waveguide propagation mode. A system has a non-classical light generation stage for converting classical light at least partly into non-classical light, and an optical switch and/or an optical phase shifter, arranged on a single optical chip.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3 V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VL product of 0.3 V.Math.cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

Provided is an optical mode switch that can effect a more compact optical switch. The optical mode switch (100) is provided with: a single input port (1); a single output port (2); two waveguides (10) provided in parallel between the input port (1) and the output port (2); and a refractive index altering means (8) that alters the refractive index of the waveguides. Any given mode light input to the input port (1) is output as any given mode light from the output port (2) in accordance with the refractive index altered by the refractive index altering means (8).

In a first region of a first conversion portion, a length of an upper tapered portion in a third direction continuously increases from a first length at a first end to a second length toward an intermediate position, and a length of a lower tapered portion in the third direction continuously increases from the first length at the first end to a third length, which is longer than the second length, toward the intermediate position. In a second region of the first conversion portion, a length of the upper tapered portion in the third direction continuously increases from the second length at the intermediate position to a fourth length, which is shorter than the third length, toward a second end, and a length of the lower tapered portion in the third direction continuously decreases from the third length at the intermediate position to the fourth length toward the second end.