A liquid crystal display device is provided with a thin film transistor which includes a gate electrode film that is provided in a first electrode layer located over a first insulating layer, a semiconductor film that is disposed over the gate electrode film via a second insulating layer, a drain electrode and a source electrode that are provided in a second electrode layer located over the semiconductor film and are in contact with an upper surface of the semiconductor film, and a light blocking film that is disposed under the first insulating layer. At least a part thereof overlaps the semiconductor film and the gate electrode film in a plan view. One of the drain electrode and the source electrode is connected to a gate line, and the light blocking film is electrically connected to the source electrode.

The present invention provides a manufacture method of a TFT array substrate and a TFT array substrate structure, and the TFT array substrate structure comprises a substrate (1), a first metal electrode (2) on the substrate (1), a gate isolation layer (3) positioned on the substrate (1) and completely covering the first metal electrode (2), an island shaped semiconductor layer (4) on the gate isolation layer (3), a second metal electrode (6) on the gate isolation layer (3) and the island shaped semiconductor layer (4), a protecting layer (8) on the second metal electrode (6), a color resist layer (7) on the protecting layer (8), a protecting layer (12) on the color resist layer (7) and a first pixel electrode layer (9) on the protecting layer (12); a via (81) is formed on the protecting layer (8), the color resist layer (7) and the protecting layer (12), and an organic material layer (10) fills the inside of the via (81).

The present invention provides a manufacture method of a TFT array substrate and a TFT array substrate structure, and the TFT array substrate structure comprises a substrate (1), a first metal electrode (2) on the substrate (1), a gate isolation layer (3) positioned on the substrate (1) and completely covering the first metal electrode (2), an island shaped semiconductor layer (4) on the gate isolation layer (3), a second metal electrode (6) on the gate isolation layer (3) and the island shaped semiconductor layer (4), a protecting layer (8) on the second metal electrode (6), a color resist layer (7) on the protecting layer (8), a protecting layer (12) on the color resist layer (7) and a first pixel electrode layer (9) on the protecting layer (12); a via (81) is formed on the protecting layer (8), the color resist layer (7) and the protecting layer (12), and an organic material layer (10) fills the inside of the via (81).

A liquid crystal display apparatus includes a plurality of data lines each having a plurality of straight line portions and a plurality of curved portions connected to a plurality of the straight line portions; a plurality of gate lines intersecting the data lines; thin film transistors connected to the data lines and the gate lines; and pixel electrodes connected to the thin film transistors. Accordingly, even in a case where driver inversion becomes column inversion, apparent inversion can become dot inversion. As a result, it is possible to eliminate transverse line flicker and to increase a charging rate of pixels. In addition, uniformity of the pixels can be maintained, so that the inversion driving schemes can be applied to a PVA mode. As a result, it is possible to obtain a wide viewing angle and to improve side or lateral visibility.

A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.

A pixel unit, an array substrate and a LCD device including the array substrate are disclosed. The pixel unit includes a scan line, a signal line, a slit electrode, a coupling electrode cooperated with the slit electrode to generate an electric field, and a thin film transistor, a plurality of slits are formed on the slit electrode. The scan line and the signal line are intersected and overlapped with each other to define at least two sub-regions. The coupling electrode comprises at least two sub-electrodes respectively located in the at least two sub-regions. The slit electrode corresponds to all of the sub-regions and slits in different sub-regions extend along different directions.

Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a transistor structure having at least five thin film transistors (TFTs), said transistor structure configured in view of changes in operating characteristics that depend on a channel length of a back channel etched (BCE) type oxide transistor.

A display device includes an array substrate defined with a plurality of pixel structures arranged in an array. Each of the pixel structures includes a semiconductor layer disposed over a substrate and a first metal layer disposed over the substrate. The pixel structure includes a first insulating layer disposed over the semiconductor layer, having a first opening exposing a top surface of the semiconductor layer and a sidewall surface of the first insulating layer. The pixel structure includes a metal pad disposed over the first insulating layer, being formed over the top surface of the semiconductor layer and the sidewall surface of the first insulating layer through the first opening. The pixel structure includes a second insulating layer disposed over the metal pad and the first insulating layer, having a second opening exposing the metal pad over the sidewall surface of the first insulating layer.

A liquid crystal display includes a plurality of pixels including first, second and third pixels that display different colors and are sequentially disposed, a plurality of data lines including first, second and third data lines sequentially and repeatedly disposed where the first data line is disposed between the third pixel and the first pixel, the second data line is disposed between the first pixel and the second pixel, and the third data line is disposed between the second pixel and the third pixel, widths of the first, second and third data lines are substantially the same as each other, and a first interval between the first data line and the second data line is different from a second interval between the second data line and the third data line or a third interval between the third data line and the first data line.

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.