An electrochromic device, a preparation method therefor and an application thereof are disclosed. The electrochromic device comprises a first conductive layer, a color-changing layer and a second conductive layer that are arranged in succession, wherein at least one first electrode lead is connected on the first conductive layer, and the first electrode lead passes through the color-changing layer and the second conductive layer; and at least one second electrode lead is connected on the second conductive layer, and the second electrode lead passes through the color-changing layer and the first conductive layer. The electrochromic device can achieve the application of the electrochromic device under the premise that the two conductive layers are not staggered, and on the basis of implementing electrochromism, the technical effect of gradual color change can be achieved by means of changing the magnitude of the power supply voltage and/or current.

An electrochromic device, a preparation method therefor and an application thereof are disclosed. The electrochromic device comprises a first conductive layer, a color-changing layer and a second conductive layer that are arranged in succession, wherein at least one first electrode lead is connected on the first conductive layer, and the first electrode lead passes through the color-changing layer and the second conductive layer; and at least one second electrode lead is connected on the second conductive layer, and the second electrode lead passes through the color-changing layer and the first conductive layer. The electrochromic device can achieve the application of the electrochromic device under the premise that the two conductive layers are not staggered, and on the basis of implementing electrochromism, the technical effect of gradual color change can be achieved by means of changing the magnitude of the power supply voltage and/or current.

An electro-active device is disclosed that may comprise a buffer immobilized on one or more films. The electro-active device may comprise a first substrate, a second substrate, a first electrode, and a second electrode. The first and second substrates may be disposed in a spaced apart relationship. Further, the first electrode may be associated with the first substrate and the second electrode may be associated with the second substrate. Additionally, a cathodic film may be associated with one electrode and an anodic film may be associated with the other electrode. The anodic film may comprise an anodic compound immobilized thereon and the cathodic film likewise may comprise a cathodic compound immobilized thereon. Further, a buffer component may be immobilized on the cathodic film and/or the anodic film.

An electro-active device is disclosed that may comprise a buffer immobilized on one or more films. The electro-active device may comprise a first substrate, a second substrate, a first electrode, and a second electrode. The first and second substrates may be disposed in a spaced apart relationship. Further, the first electrode may be associated with the first substrate and the second electrode may be associated with the second substrate. Additionally, a cathodic film may be associated with one electrode and an anodic film may be associated with the other electrode. The anodic film may comprise an anodic compound immobilized thereon and the cathodic film likewise may comprise a cathodic compound immobilized thereon. Further, a buffer component may be immobilized on the cathodic film and/or the anodic film.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

An electrochromic device according to an embodiment includes a first transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a second transparent conductive layer. The electrolyte layer includes a tantalum atom. The electrochromic layer includes a tungsten atom. The ion storage layer includes an iridium atom and a tantalum atom. The ion storage layer is hydrogenated in bleached state and the electrochromic device has a transmittance of 64.1% or more in bleached state. A difference between the transmittance of the electrochromic device in bleached state and the transmittance of the electrochromic device in colored state is 8.4% or more.

An electrochromic device according to an embodiment includes a first transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a second transparent conductive layer. The electrolyte layer includes a tantalum atom. The electrochromic layer includes a tungsten atom. The ion storage layer includes an iridium atom and a tantalum atom. The ion storage layer is hydrogenated in bleached state and the electrochromic device has a transmittance of 64.1% or more in bleached state. A difference between the transmittance of the electrochromic device in bleached state and the transmittance of the electrochromic device in colored state is 8.4% or more.