An optical module includes: a Peltier module; an optical semiconductor element mounted on the Peltier module; and a driver that drives high-frequency lines of the optical semiconductor element. The optical semiconductor element includes: optical circuits providing a function of an optical interferometer and the high-frequency lines. Cooling performance of the Peltier module in a region in vicinity of the driver is higher than the cooling performance in other regions.

Various embodiments of the present disclosure are directed towards a semiconductor structure comprising a waveguide. The waveguide has an input region and an output region. The input region is configured to receive light. The waveguide comprises a lower doped structure comprising a first doping type and a plurality of doped pillar structures disposed within the lower doped structure. The doped pillar structures comprise a second doping type opposite the first doping type. The doped pillar structures extend from a top surface of the lower doped structure to a point below the top surface of the lower doped structure.

An optical modulator includes a first Radio Frequency (RF) line and a second RF line; an optical waveguide along a length of the modulator with an input and an output; and a plurality of segments along the length including a first set of segments, a single RF line crossing, and a second set of segments, wherein the first set of segments and the second set of segments have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located off center relative to the plurality of segments, wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing.

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

Embodiments presented in this disclosure generally relate to optical signal processing. More specifically, embodiments disclosed herein are directed to a semiconductor-insulator-semiconductor capacitor (SISCAP) modulator. One embodiment includes an optical modulator having a capacitive element configured to modulate an optical signal. The capacitive element includes a single-crystal semiconductor layer, a silicon germanium layer, and a dielectric region between the single-crystal semiconductor layer and the silicon germanium layer.

An optoelectronic device comprising an optical waveguide formed in a silicon device layer of a silicon-on-insulator wafer. The optical waveguide including a semiconductor junction comprising a first doped region of semiconductor material and a second doped region of semiconductor material. The second doped region containing dopants of a different species to the first doped region. A first portion of the first doped region extends horizontally on top of the second doped region, a second portion of the first doped region extends vertically along a lateral side of the second doped region and a third portion of the first doped region protrudes as a salient from the first or second portion of the first doped region into the second doped region.

A manufacturing method for a photonic device includes dividing a target photonic network, which is a photonic network configured for the photonic semiconductor device, into a plurality of sub-photonic networks, forming the plurality of sub-photonic networks on a plurality of photonic chips, and connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the target photonic network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip. Compared with the scale of the photonic network of the existing photonic semiconductor device, which is limited due to the footprint limitation of a single chip, the scale of the photonic network of the photonic semiconductor device is increased several times.

A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.

Embodiments of the disclosure provide an optical ring modulator. The optical ring modulator includes waveguide with a first semiconductor material of a first doping type, and a second semiconductor material having a second doping type adjacent the first semiconductor material. A P-N junction is between the first semiconductor material and the second semiconductor material. A plurality of photonic crystal layers, each embedded within the first semiconductor material or the second semiconductor material, has an upper surface that is substantially coplanar with an upper surface of the waveguide structure.

Various embodiments of a coplanar waveguide (CPW) transmission line as well as a silicon-based electro-optic (E-O) modulator comprising the CPW transmission line are described. The CPW transmission line has a curved or winding shape. The silicon-based E-O modulator includes a rib optical waveguide, a beam splitter, a beam combiner, and a CPW transmission line that exhibits the winding shape. At least one of the two optical arms of the rib optical waveguide alternately and periodically extends through a first groove and a second groove of the CPW transmission line. The plurality of active sections of the rib optical waveguide are evenly distributed on both sides of the CPW transmission line to suppress undesired transmission modes. An increased length of transmission path of the rib optical waveguide is also avoided or minimized, thereby reducing the transmission speed mismatch of the E-O modulator, which is essential for achieving high-speed operation.