A method for operating an optical system may include selecting a band gap energy level for an optical waveguide in an electro-optic modulator. The band gap energy level may correspond to a predetermined phase shift efficiency of a waveguide electrode coupled to the optical waveguide. The method may further include generating, across a conductive plane in the electro-optic modulator, a differential voltage that produces a predetermined temperature in a waveguide core of the optical waveguide. The predetermined temperature may correspond to the band gap energy level selected for the optical waveguide. The method may further include transmitting, through the optical waveguide and with a modulating voltage applied by the waveguide electrode, an optical wave to an optical wave combiner. The modulating voltage may produce an amount of phase shift in the optical wave at the predetermined phase shift efficiency.

In photonic integrated circuits implemented in silicon-on-insulator substrates, non-conductive channels formed, in accordance with various embodiments, in the silicon device layer and/or the silicon handle of the substrate in regions underneath radio-frequency transmission lines of photonic devices can provide breaks in parasitic conductive layers of the substrate, thereby reducing radio-frequency substrate losses.

Semiconductor electro-optical modulators which receives an input optical signal and provides a modulated output optical signal based on an input electrical signal are disclosed. The semiconductor electro-optical modulator may comprise at least one electrical transmission line adapted to carry the input electrical signal and a semiconductor electro-optical phase shifter waveguide electrically coupled to the at least one electrical transmission line. An optical path length of the semiconductor electro-optical phase shifter waveguide between a modulation begin plane of the semiconductor electro-optical modulator and a modulation end plane of the semiconductor electro-optical modulator may be greater than an electrical path length of the electrical transmission line between the modulation begin plane of the semiconductor electro-optical modulator and the modulation end plane of the semiconductor electro-optical modulator.

An injection modulator for modulation of optical radiation, having an optical waveguide and a diode structure, having at least two p-doped semiconductor portions, at least two n-doped semiconductor portions and at least one lightly or undoped intermediate portion between the p-doped and n-doped portions. The p-doped portions when viewed in the longitudinal direction of the waveguide are offset with respect to the n-doped portions and the diode structure is arranged in a resonance-free portion of the waveguide. The p-doped portions lie on one side of the waveguide, the n-doped portions lie on the other side of the waveguide and the intermediate portion lies in the center, each portion extends transversely with respect to the waveguide longitudinal direction in the direction of the waveguide center of the waveguide and no p-doped portion when viewed in the longitudinal direction of the waveguide overlaps any n-doped portion.

The objective of the present invention is to provide an optical modulator adapted for use with various modulating units and various modulation regions, and with which variability in optical losses is limited as far as possible. An optical modulator in which an optical waveguide and a control electrode for controlling an optical wave propagating through the optical waveguide are provided in a substrate, characterized in that: the optical waveguide is provided with a first branching portion which causes one input light beam to branch into two light beams; each of a first and a second modulating portion connected to two branched waveguides which branch at the first branching portion is provided with a structure in which one or more Mach-Zehnder type optical waveguides are combined; the control electrode comprises signal electrodes which apply modulated signals to the first and second modulating portions; input portions of all the signal electrodes are disposed on either the left or the right of the substrate relative to the direction in which the optical wave propagates; and in relation to output portions of the signal electrodes, the output portions of the signal electrodes led out from each modulating portion are disposed on the side on which the first or second modulating portions are disposed, relative to the direction in which the optical wave propagates.

To provide an optical device which enables both (i) suppression of an increase in production cost and (ii) suppression of an increase in optical loss which increase is caused in accordance with a change in temperature of an external environment.

In the optical device, a holding member and an optical fiber are bonded and fixed to each other via a first resin layer which is provided between a holding surface of the holding member and a surface of the optical fiber, and the substrate waveguide and the holding member are bonded and fixed to each other via a second resin layer which is provided between an upper surface of the substrate waveguide and a region (bonding surface 31) of a lower surface of the holding member which region is outside the holding surface.

Barium titanate thin film waveguides and related modulator and devices with photonic crystal structures to promote wide bandwidths, low operating voltages and small footprint.

An integral chip is disclosed by embodiments of the present disclosure, including: two mono-mode vertical coupling gratings, two modulation modules, one 2×1 multi-mode interference coupler, and one dual-mode vertical coupling grating. The integral chip is capable of operating in dual wavelengths and dual polarization states by combination of polarization multiplexing and wavelength division multiplexing so as to realize modulation of complex formats and to enhance data modulation rate.

A large-scale tunable-coupling ring array includes an input waveguide coupled to multiple ring resonators, each of which has a distinct resonant wavelength. The collective effect of these multiple ring resonators is to impart a distinct time delay to a distinct wavelength component (or frequency component) in an input signal, thereby carrying out quantum scrambling of the input signal. The scrambled signal is received by a receiver also using a large-scale tunable-coupling ring array. This receiver-end ring resonator array recovers the input signal by imparting a compensatory time delay to each wavelength component. Each ring resonator can be coupled to the input waveguide via a corresponding Mach Zehnder interferometer (MZI). The MZI includes a phase shifter on at least one of its arms to increase the tunability of the ring array.

A circuit that allows the control of a parameter in each arm of a Mach-Zehnder interferometer or modulator in push-pull mode using a single control terminal and a ground (or a differential driving circuit). The parameter that is controlled can be a phase shift, a modulation or an attenuation. The magnitude and the frequency of the parameter can be adjusted.