A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.