A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

A resin composition which is configured such that if the resin composition is formed into a resin composition film that has a thickness of 3.0 μm after a heat treatment at a temperature within the range of 200-350° C., the resin composition film forms a heat-resistant resin film that has a light transmittance of 50% or more at a wavelength of 365-436 nm before the heat treatment, while having a light transmittance of 10% or less at a wavelength of 365-436 nm after the heat treatment. Provided is a resin composition having a function of absorbing ultraviolet light and visible light in a short wavelength range, which is suitable for the formation of a planarization film, an insulating layer and a partition wall that are used for organic light emitting devices or display devices.

The present invention relates to a novel di-amine compound, a heat-resistant resin using the di-amine compound, and a resin composition using the heat-resistant resin, and a cured film excellent in chemical resistance and film properties even by a thermal treatment at a low temperature of 200° C. or less can be obtained. The novel di-amine compound is represented by the general formula (1). The heat-resistant resin composition of the present invention or the resin composition can be suitably used in a surface protective film and an interlayer dielectric film of a semiconductor device, a dielectric layer or a planarizing layer of an organic electroluminescent element (organic EL), or the like. ##STR00001##
(In the general formula (1), R.sup.1 and R.sup.2 each are a divalent aliphatic group, R.sup.3 and R.sup.4 each are a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group bonded to an aromatic group by —O—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), R.sup.5 and R.sup.6 each are an organic group having any of a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an aliphatic group, an aromatic group, an acetyl group, a carboxyl group, an ester group, an amide group, an imide group, and a urea group, A is a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group in which two or more aromatic groups are bonded by a single bond, or a divalent organic group in which two or more aromatic groups are bonded by —O—, —S—, —CO—, —SO.sub.2—, —CH.sub.2—, —C(CH.sub.3).sub.2— or —C(CF.sub.3).sub.2— (wherein F is fluorine), p and q each are an integer number in the range of 0 to 3).

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 Å/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.

The present invention provides a negative-type photosensitive resin composition capable of obtaining a cured film suppressing generation of development residues caused by a pigment and having high sensitivity and excellent heat resistance and light blocking capability. A negative-type photosensitive resin composition contains an alkali-soluble resin (A), a radical-polymerizable compound (B), a photopolymerization initiator (C1), and a pigment (D1). In this resin composition, the radical-polymerizable compound (B) contains a flexible chain-containing radical-polymerizable compound (B1), the flexible chain-containing radical-polymerizable compound (B1) contains a compound having (I) a structure derived from a compound having at least three hydroxyl groups in the molecule, (II) at least three ethylenically unsaturated double bond groups, and (III) at least one aliphatic chain, the aliphatic chain has an average molecular weight of 40 to 500, and the content of the pigment (D1) is 5 to 70 mass % of the total solid content.

[Problem] To provide a positive type photosensitive polysiloxane composition that can manufacture a cured film having a high surface smoothness, in which generation of wrinkles is suppressed even without adding a curing auxiliary or performing flood exposure. [Means for Solution] A positive type photosensitive polysiloxane composition comprising (I) a polysiloxane, (II) a carboxylic acid compound that is a monocarboxylic acid or a dicarboxylic acid, of 200 to 50,000 ppm based on the total mass of the composition, (III) a diazonaphthoquinone derivative, and (IV) a solvent, and a method for manufacturing a cured film using the composition.

The present invention provides a method for manufacturing a substrate equipped with a wiring electrode which has a fine pattern and is excellent in conductivity and in which an opaque wiring electrode is hardly visible. Disclosed is a method for manufacturing a substrate equipped with a wiring electrode including the steps of forming an opaque wiring electrode on at least one side of a transparent substrate, applying a positive photosensitive composition on one side of the transparent substrate, and exposing and developing the positive photosensitive composition using the opaque wiring electrode as a mask to form a functional layer at a portion corresponding to the opaque wiring electrode.

A resin composition comprising the following component (A), the following component (B), and one or more selected from the group consisting of the following component (C) and the following component (D).

(A) polyimide, a polyimide precursor, polybenzoxazole, or a polybenzoxazole precursor
(B) one or more selected from the group consisting of a compound represented by the following formula (11), a compound represented by the following formula (21), and N-methyl-2-pyrrolidone
(C) a rust inhibitor
(D) a silane coupling agent

##STR00001##

A photoresist composition, an organic light-emitting diode array substrate and their manufacturing methods are provided. The photoresist composition includes: an alkali soluble resin, a photosensitive monomer, a thermochromic pigment and a solvent whose mass percentages are 10-30 wt %, 1-12 wt %, 5-20 wt %, and 40-65 wt %, respectively; and the thermochromic pigment has a darkened color upon being heated.

[Object] To provide a positive type photosensitive composition capable of forming a cured film having high transparency [Means] The present invention provides a positive type photosensitive siloxane composition comprising: a polysiloxane, a diazonaphthoquinone derivative, an additive having a quaternary ammonium structure and the capability of interacting with the polysiloxane, and a solvent. The polysiloxane and the additive interact with each other before exposure, but they lose the interaction after exposure.