Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: ##STR00001##
where R.sup.1 is a single chemical bond or a divalent C1-C6 hydrocarbon group which may have a substituent, and R.sup.2 is a hydrogen or a monovalent C1-C6 hydrocarbon group which may have a substituent.

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the resist underlayer film-forming composition. The resist underlayer film-forming composition comprises an organic solvent and the reaction product of (A) a hydantoin-containing compound that has two epoxy groups and (B) a hydantoin-containing compound different from (A). This reaction product is preferably the reaction product of a secondary amino group present in the hydantoin-containing compound (B) and the epoxy group present in the hydantoin-containing compound (A).

The present invention relates to a positive-type photosensitive resin composition and to a cured film prepared therefrom The positive-type photosensitive resin composition comprises an acid-modified epoxy acrylate resin of a specific structure, so that it can provide a cured film that is excellent in flexible characteristics while having excellent film retention rate and sensitivity.

An object is to provide a novel bismaleimide compound. The solution is a bismaleimide compound represented by formula (1):

##STR00001##

wherein A.sub.1 represents a direct bond, a divalent linking group represented by formula (1-1), (1-2), or (1-3):

##STR00002##

##STR00003##

##STR00004##

wherein ring a represents a benzene ring or a cyclohexane ring; X represents a direct bond or a divalent linking group; Z represents a monovalent substituent bonded to ring a; p, q, and r are the number of substituents Z, p and q represent an integer of 0 to 3, and r represents an integer of 0 to 2; or a divalent linking group other than this; at least one of a plurality of A.sub.1s is a divalent linking group represented by formula (1-1), (1-2), or (1-3); A.sub.2 represents a divalent linking group obtained by removing two carboxy groups from an aromatic dicarboxylic acid compound; Y represents a divalent linking group; and n is an average value of the number of repeating units and is a real number in a range of 1 to 100.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a sulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and improved CDU, and forms a pattern of good profile after exposure and development.

A polymer having repeating units derived from at least one monomer selected from the group consisting of aromatic hydroxy compounds represented by the formulas (1A) and (1B), wherein the repeating units are linked to each other by direct bonding between aromatic rings:

##STR00001##

wherein each R is independently an alkyl group having 1 to 40 carbon atoms and optionally having a substituent, an aryl group having 6 to 40 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 40 carbon atoms and optionally having a substituent, an alkynyl group having 2 to 40 carbon atoms, an alkoxy group having 1 to 40 carbon atoms and optionally having a substituent, a halogen atom, a thiol group, an amino group, a nitro group, a cyano group, a nitro group, a heterocyclic group, a carboxyl group, or a hydroxy group, at least one R is a group containing a hydroxy group, and each m is independently an integer of 1 to 10.

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

An onium salt of arenesulfonic acid having a bridged ring-containing group generates a bulky acid having an appropriate strength and controlled diffusion. When a positive resist composition comprising the onium salt and a base polymer is processed by lithography, a pattern of rectangular profile having high resolution and reduced LER is formed.

Embodiments encompassing a series of compositions containing photoacid generator (PAG) and a base are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of copolymers of a variety of norbornene-type cycloolefinic monomers and maleic anhydride in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), PAG and a base, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses, are disclosed.

A novel sulfonium compound has formula (A). A positive resist composition comprising a polymer and a quencher containing the sulfonium compound is improved in resolution and LER during pattern formation and has storage stability. In formula (A), R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are independently a C.sub.1-C.sub.20 monovalent hydrocarbon group, p is an integer of 0-5, q is an integer of 0-5, and r is an integer of 0-4. ##STR00001##