A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid includes a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (D0-1) below, in which Ya.sup.01 represents an arylene group, an alkylene group, an alkenylene group or a divalent alicyclic group, provided that the divalent alicyclic group may contain a hetero atom in the alicyclic structure; R.sup.01 represents a linear or branched alkyl group. n.sub.01 represents 0 or 1.

##STR00001##

A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device. The composition including a reaction product between a compound of the following Formula (1) or (2) and a compound of the following Formula (3), and a solvent:

##STR00001##

A chemically amplified positive resist composition comprising (A) a base polymer, (B) a photoacid generator, and (C) a quencher is provided. The base polymer (A) contains a polymer comprising phenolic hydroxy group-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. The photoacid generator (B) and the quencher (C) are present in a weight ratio (B)/(C) of less than 3/1. The resist composition exhibits a very high isolated-space resolution and forms a pattern with reduced LER, rectangularity, minimized influences of develop loading and residue defects.

Embodiments in accordance with the present invention encompass self-imageable polymer compositions containing a variety of photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. The compositions of this invention can be tailored to form positive tone or negative tone images depending upon the intended application in aqueous developable medium. The images formed therefrom exhibit improved properties including low wafer stress and better thermo-mechanical properties, among other property enhancements.

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed. ##STR00001##

An onium salt of arenesulfonic acid having a bridged ring-containing group generates a bulky acid having an appropriate strength and controlled diffusion. When a positive resist composition comprising the onium salt and a base polymer is processed by lithography, a pattern of rectangular profile having high resolution and reduced LER is formed.

A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Embodiments encompassing a series of compositions containing photoacid generator (PAG) and a base are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of copolymers of a variety of norbornene-type cycloolefinic monomers and maleic anhydride in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), PAG and a base, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses, are disclosed.

A resist composition comprising a polymer or polymer-bound photoacid generator is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a urethane, thiourethane or urea bond in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.