The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

Provided is a negative photoresist used for a semiconductor encapsulation process, belonging to the technical field of semiconductor processing. A negative photoresist formulation includes 40-65 wt % of modified epoxy acrylate, 3-6 wt % of photosensitizer, 100-1000 ppm of leveling agent, and the remainder of solvent; the leveling agent is a solution of a 7:3 mass ratio of polydimethylsiloxane copolymer having a molecular weight of 3000-6000 and propylene glycol monomethyl ether acetate. If the negative photoresist is coated at a thickness of about 50 um, the coating uniformity can be controlled to below 5%, ensuring the quality of exposure such that the thickness of electroplated copper meets requirements.

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A), wherein the polysiloxane (A) is a polysiloxane represented by the general formula (1), and wherein (X) and (Y) are represented by the general formulas (4) to (6).

7.5≦(X)≦75  (4)

2.5≦(Y)≦40  (5)

1.5×(Y)≦(X)≦3×(Y)  (6)

##STR00001##

A curable resin composition includes a silicon-containing polymer, hollow silica particles having greater than or equal to two times higher a maximum peak value in a Q4 region than that in a Q3 region, as measured by silicon nuclear magnetic resonance spectroscopy (Si-NMR) analysis. A solvent, a thin film prepared from the composition, and a color conversion panel including the thin film, and a display device including the color conversion panel are also provided.

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Provided is a modified hydroxy naphthalene novolak resin which is optimal for a photosensitive composition and a resist material having high optical sensitivity, resolution, and alkali developability, and excellent heat resistance and moisture absorption resistance, and the modified hydroxy naphthalene novolak resin includes a structural moiety (I) represented by Structural Formula as a repeating unit: ##STR00001## wherein R.sup.1is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group; m is 1 or 2; R.sup.2's each independently is any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and at least one of the R.sup.1's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.