Patent classifications
G03F7/0758
Photopolymer composition
Provided is a photopolymer composition for hologram recording comprising: a polymer matrix or a precursor thereof; a dye including a compound of the following Chemical Formula 1; a photoreactive monomer; and a photoinitiator, ##STR00001##
DISPERSION LIQUID, COMPOSITION, CURED FILM, COLOR FILTER, SOLID-STATE IMAGING ELEMENT, AND IMAGE DISPLAY DEVICE
A dispersion liquid contains an inorganic oxide particle surface-treated with at least one of a compound represented by Formula Si(R.sup.A1)(X.sup.A1).sub.3 or a compound represented by Formula Si(R.sup.A2)(R.sup.A20)(X.sup.A2).sup.2, polysiloxane having at least one of a T unit represented by Formula [R.sup.B1SiO.sub.3/2] or a D unit represented by Formula [R.sup.B2R.sup.B20SiO], and an organic solvent, where a content of the polysiloxane is 0.5% to 39% by mass with respect to a total amount of the inorganic oxide particle and the polysiloxane, in which in the formula, R.sup.A1, R.sup.A2, R.sup.B1, and R.sup.B2 represent a functional group, X.sup.A1 and X.sup.A2 represent a hydroxyl group or a hydrolyzable group, and R.sup.A20 and R.sup.B20 represent an alkyl group or an aryl group.
HIGHLY SEQUENCED COPOLYMER FOR DUAL-TONE PHOTORESISTS, RESIST COMPOSITION AND PATTERNING PROCESS THEREOF
A resin including a highly sequenced copolymer is presented, and the preparation and application of its resist composition is presented. The resist has excellent performance and can promote the development of integrated circuits.
RESIN, RESIN COMPOSITION, AND DISPLAY DEVICE USING SAME
Provided are a display device including a resin containing a repeating unit represented by chemical formula (1), a resin composition comprising the resin, and a pixel separation unit formed of the resin composition, in which the display device is a display device including a first electrode formed on a substrate, a pixel separation unit formed on the first electrode to partially expose the first electrode, and a second electrode installed to face the first electrode, and the pixel separation unit has an absorbance of 0.5/μm or more at a wavelength of 550 nm.
Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film
Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.
NEGATIVE TYPE PHOTOSENSITIVE COMPOSITION CURABLE AT LOW TEMPERATURE
To provide a negative type photosensitive composition curable at a low temperature and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability, and also to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising: an alkali-soluble resin, a compound having two or more (meth)acryloyloxy groups, a polysiloxane, a polymerization initiator, and a solvent. The alkali-soluble resin is a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit.
Photopolymer composition
A photopolymer composition comprising a polymer matrix or a precursor thereof including a reaction product between (i) a (meth)acrylate-based (co)polymer in which a silane-based functional group is located in a branched chain and an equivalent weight of the silane-based functional group is 300 g/eq to 2000 g/eq, and (ii) a linear silane crosslinking agent; a photoreactive monomer; and a photoinitiator, a hologram recording medium using the same, an optical element using the hologram recording medium, and a holographic recording method. The photopolymer composition can more easily provide a photopolymer layer having improved durability against temperature and humidity while having a large refractive index modulation value.
Dye compound and photopolymer composition
The present invention relates to a compound having a novel structure, a photopolymer composition including the compound as a dye, a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the hologram recording medium.
Semiconductor devices and methods of manufacturing
A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.
TREATMENT LIQUID AND PATTERN FORMING METHOD
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa.sup.1/2 or less and a second organic solvent having an SP value of 17.1 MPa.sup.1/2 or more.