The present invention belongs to the field of semiconductor technology, and specifically provides a photo mask and an exposure system. The photo mask is provided with a patterning structure for forming a resulting pattern, the patterning structure comprising a strip-like main body for forming a rectilinear pattern, wherein the patterning structure further comprises a patterning structure auxiliary unit provided at two sides of the strip-like main body, the patterning structure auxiliary unit being capable of adjusting and compensating direction and intensity of light during exposure. With the photo mask, the resulting pattern formed through exposure using the photo mask has improved fineness, thereby improving accuracy of the formed rectilinear pattern.

Provided is a method of manufacturing a mask including preparing a support plate, forming a light blocking layer on the support plate, curing a predetermined region of the light blocking layer, and removing other region of the light blocking layer, excluding the predetermined region.

Method for producing flexographic printing plates, using as starting material a photopolymerizable flexographic printing plate which at least comprises, arranged one above another, a dimensionally stable support, at least one photopolymerizable, relief-forming layer, at least comprising an elastomeric binder, an ethylenically unsaturated compound and a photoinitiator, a digitally imagable layer,
comprising at least the following steps: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the flexographic printing plate through the mask with actinic light, and photopolymerizing the image regions of the layer, the exposing taking place with a plurality of UV-LEDs which are arranged on at least one UV-LED strip which is moved relative to the surface of the flexographic printing plate, and (c) developing the photopolymerized layer by washing out and drying or by thermal development,
characterized in that in the UV-LED strip or in a separate strip, at least one ultrasonic sensor is arranged, at least the thickness of the flexographic printing plate for exposure is determined with the at least one ultrasonic sensor, depending on the measured thickness of the flexographic printing plate, the exposing of the flexographic printing plate is controlled in respect of at least one of the following parameters: (i) number of exposure steps, (ii) exposure intensity, (iii) energy input per exposure step, (iv) duration of the individual exposure steps, (v) overall duration of exposure.

Described is a method for producing flexographic printing plates, using as starting material a photopolymerizable flexographic printing plate which contains a dimensionally stable support, a photopolymerizable, relief-forming layer, and a digitally imagable layer. A mask is produced by imaging the digitally imagable layer. The printing plate is exposed with actinic light through the mask. The image regions of the layer are photopolymerized. A plurality of UV-LEDs are arranged on at least one UV-LED strip which is moved relative to the surface of the flexographic printing plate for exposure. The photopolymerized layer is developed by washing out and drying or by thermal development. An ultrasonic sensor determines the thickness of the flexographic printing plate for exposure. The exposure is controlled as to number of exposure steps, exposure intensity, energy input per exposure step, duration of individual exposure steps, and/or overall duration of exposure.

The present invention is a material for forming an organic film, containing: an organic film compound represented by the following general formula (1); and an organic solvent. This provides: an organic film compound which allows the formation of an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film-formability and adhesiveness to a substrate; a material for forming an organic film containing the compound; and a patterning process using the material.

##STR00001##

A method of manufacturing a substrate includes applying solder resist ink containing a mixing resin of epoxy-based resin and acrylic-based resin on at least one surface of a substrate body to form a solder resist layer, and irradiating a predetermined portion of the solder resist layer with ultraviolet rays and controlling an amount of irradiation of the ultraviolet rays irradiated to the predetermined of the solder resist layer to form the predetermined portion in transmissivity that transmits light.

Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50 C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition:

##STR00001## wherein, in Formula 1, descriptions of L.sub.11 to L.sub.13, a11 to a13, An, R.sub.11, R.sub.12, b12, and p1 are provided in the present specification.

The present invention belongs to the field of semiconductor technology, and specifically provides a photo mask and an exposure system. The photo mask is provided with a patterning structure for forming a resulting pattern, the patterning structure comprising a strip-like main body for forming a rectilinear pattern, wherein the patterning structure further comprises a patterning structure auxiliary unit provided at two sides of the strip-like main body, the patterning structure auxiliary unit being capable of adjusting and compensating direction and intensity of light during exposure. With the photo mask, the resulting pattern formed through exposure using the photo mask has improved fineness, thereby improving accuracy of the formed rectilinear pattern.

According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

A layered structure includes a substrate; an underlayer including a reversibly crosslinked polymer and/or oligomer interconnected by ester functionalities; a silicon-containing mask overlaying the underlayer; and a photoresist overlaying the silicon-containing hardmask layer. Also described are multilayer lithographic processes and processes of forming the underlayer, which generally includes coating an underlayer composition onto a surface of the substrate at a thickness effective to provide a planar upper surface, wherein the underlayer composition includes a polymer including terminal alcohol groups, a multifunctional anhydride, and a solvent. The underlayer composition is heated to a temperature to effect a crosslinking reaction between the multifunctional anhydride and the terminal alcohol groups to form the ester functionalities, which can be selectively removed (reversibly crosslinked) using a wet etchant.