A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.

A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R.sup.1 represents a hydrogen atom, or the like; R.sup.2 represents a hydrogen atom or the like; and R.sup.3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar.sup.1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R.sup.4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R.sup.5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.

##STR00001##

A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4-(a+b)  Formula (1)
wherein R.sup.1 is an organic group of Formula (1-2) ##STR00001##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.3 is a hydrolyzable group; and Formula (2)
R.sup.7.sub.cR.sup.8.sub.dSi(R.sup.9).sub.4-(c+d)  Formula (2)
wherein R.sup.7 is an organic group of Formula (2-1) ##STR00002##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.9 is a hydrolyzable group.

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. ##STR00001##

An object of the present invention is to provide an aqueous developer for a flexographic printing plate capable of maintaining good developability and suppressing aggregation of a dispersion in the developer diluted with water after repeated use, and a manufacturing method of a flexographic printing plate using the same. The aqueous developer for a flexographic printing plate according to the present invention is an aqueous developer for a flexographic printing plate, containing a nonionic surfactant represented by Formula (1), and water.

R.sup.1O—(AO).sub.n—H   (1)

Here, in Formula (1),

R.sup.1 represents a linear aliphatic hydrocarbon group having 9 to 30 carbon atoms,

A represents an alkylene group having 2 to 4 carbon atoms, and

n represents an integer of 7 or more, in which in a case where n is an integer of 2 or more, a plurality of A's may be the same or different from each other.

The present invention relates to a thermal conductive layer that includes at least one filler, has a thermal diffusivity of 5.0×10.sup.−7 m.sup.2s.sup.−1 or more, and has a volume resistivity of 1.0×10.sup.11 Ω.Math.cm or more. Further, the present invention relates to a photosensitive layer to which the thermal conductive layer is applied, a photosensitive composition, a manufacturing method for a thermal conductive layer, and a laminate and a semiconductor device.

Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.