A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCH.sub.2CH(OH)CH.sub.2O— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.]

A first object of the present invention is to provide a method of manufacturing a conductive substrate having a low defect ratio. In addition, a second object of the present invention is to provide a conductive substrate that is obtained using the method of manufacturing a conductive substrate. In addition, a third object of the present invention is to provide a touch sensor, an antenna, and an electromagnetic wave shielding material that include the conductive substrate.

The method of manufacturing a conductive substrate is a method of manufacturing a conductive substrate including a substrate and a patterned conductive layer that is disposed on the substrate, the method including: steps X1 to X7 in this order or steps Y1 to Y6 in this order.

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

The present disclosure provides a method for defining multiple resist patterns. In the present disclosure, by using a double-exposing process in combination with a dual-developing process (i.e., a PTD process followed by an NTD process), different resist patterns (e.g., a groove pattern and a through hole pattern) can be formed on a same resist layer. Problems encountered in the prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem, and so on, can be successfully addressed.

Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

Provided is a photosensitive composition including: a polymer (P) which includes a structural unit derived from a vinylbenzene derivative, a structural unit including a radical polymerizable group, and a structural unit including at least one kind of functional group selected from the group consisting of a primary hydroxyl group and an amino group, and in which the content of the structural unit derived from the vinylbenzene derivative is equal to or greater than 30% by mol; and a radical polymerization initiator.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

A resist pattern formation method including forming a resist film on a support by using a resist composition; exposing the resist film; and subjecting the exposed resist film to alkali development to form a positive-tone resist pattern. The resist composition contains a first resin component and a second resin component. The first resin component contains a polymeric compound having a constitutional unit derived from acrylic acid in which a hydrogen atom bonded to a carbon atom at an α-position may be substituted with a substituent, and the second resin component contains a polymeric compound having both a constitutional unit containing a phenolic hydroxyl group and a constitutional unit containing an acid decomposable group having a polarity that is increased under action of acid.