The present disclosure provides a method for defining multiple resist patterns. In the present disclosure, by using a double-exposing process in combination with a dual-developing process (i.e., a PTD process followed by an NTD process), different resist patterns (e.g., a groove pattern and a through hole pattern) can be formed on a same resist layer. Problems encountered in the prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem, and so on, can be successfully addressed.

Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10.sup.−10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 10.sup.3 to 10.sup.−6. Requirement (a): a compound that is selected from the group consisting of an amide compound, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 5.0 to 99.9999999 mass % Requirement (b): a compound that is selected from the group consisting of an amide compound having 6 or more carbon atoms, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 10.sup.−1 to 0.1 mass %
P=[Total Mass of Compound (C)]/[Total Mass of Compound (B)]  (Expression I)

A method for producing an optical waveguide by: (a) depositing a first composition: (i) a polysiloxane comprising epoxy and alkenyl groups with refractive index no greater than 1.50, (ii) a compound comprising at least one epoxy group and refractive index no greater than 1.49, and (iii) a polysiloxane having refractive index at least 1.50; (iv) a photo acid generator; (v) a hydrosilylation catalyst, (vi) an inhibitor for hydrosilylation; (b) curing by exposure to ultraviolet light; (c) removing the uncured portion to produce a patterned core layer; (d) after a time from 20 to 300 hours depositing a second composition comprising: (i) a polysiloxane comprising epoxy groups with refractive index no greater than 1.49, and (ii) a compound comprising at least two epoxy groups with a refractive index no greater than 1.49 and an alcohol having refractive index no more than 1.45 (iii) at least one photo acid generator.

Provided are a photosensitive resin composition in which warping of a cured film after curing is decreased and lithographic properties in a case of forming a pattern are excellent, a cured film, a laminate, a method for producing a cured film, and a semiconductor device. The photosensitive resin composition includes a polyimide precursor including a repeating unit including a biphenyl structure and a photopolymerization initiator having an oxime structure capable of generating an aryl radical by being irradiated with light.

A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.

A photoresist composition and a method of fabricating a semiconductor device, the composition including a photosensitive polymer having a protecting group; a photoacid generator (PAG); a metal precursor, the metal precursor being capable of generating metal ions and secondary electrons in response to irradiating light of a 13.5 nm wavelength thereto; and a solvent.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W.sub.1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W.sub.1; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. ##STR00001##

Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.