An object of the present invention is to provide a rinsing liquid that has excellent resolution and excellent film thickness loss suppressiveness in a case where the rinsing liquid is used to rinse a resist film and a pattern forming method that uses the rinsing liquid. The rinsing liquid according to an embodiment of the present invention is a rinsing liquid for resist film patterning for a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, and contains at least a first ester-based solvent having 7 carbon atoms other than an acetate.

A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

The present invention relates to a method for manufacturing a cliché for offset printing and a cliché for offset printing.

Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R.sup.1 and R.sup.2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R.sup.3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.

##STR00001##

A novel sulfonium compound of formula (A) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in lithography properties. ##STR00001##

A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.

The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).

Various compositions encompassing polymers containing acidic pendent groups in combination with one or more reactive olefinic compounds and a photoacid generators form self-imageable negative tone films. Examples of such polymers include polymers and copolymers containing norbornene-type repeating units having acidic pendent groups, ring opened maleic anhydride polymers, polyacrylic acid, polyhydroxystyrene polymers, and the like. The films formed from such compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices, among other applications.

A photosensitive resin composition comprises: a component (A): a resin having a phenolic hydroxyl group; a component (B): a compound having a methylol group or an alkoxyalkyl group; a component (C): an aliphatic compound having two or more functional groups, the functional groups being one or more types selected from an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group and a hydroxyl group; and a component (D): a photosensitive acid generator.