In the case of an embossing lacquer based on a UV-polymerizable prepolymer composition containing at least one acrylate monomer, the prepolymer composition—in addition to the acrylate monomer—contains at least one thiol selected from the group: 3-Mercaptopropianates, mercaptoacetates, thioglycolates, and alkylthiols as well as potentially a surface-active anti-adhesive additive selected from the group of anionic surfactants, such as polyether siloxanes, fatty alcohol ethoxylates, such as polyoxyethylene (9) lauryl ethers, monofunctional alkyl (meth)acrylates, polysiloxane (meth)acrylates, perfluoroalkyl (meth)acrylates, and perfluoropolyether (meth)acrylates as well as a photoinitiator, as well as a method for imprinting substrate surfaces coated with an embossing lacquer.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. The process can include initiating a first strip process in the processing chamber. The process can include accessing an optical emission signal associated with a plasma during the first strip process. The process can include identifying an endpoint for the first strip process based at least in part on the optical emission signal. The process can include terminating the first strip process based at least in part on the endpoint. The process can include initiating a second strip process to remove the photoresist from the substrate.

Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500° C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.

Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.

Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.

A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

A method of manufacturing metallic articles (6) including the steps of: —applying a radiation curable composition comprising a monomer including at least two polymerisable groups on a surface of a substrate thereby forming an image (2); —curing the image; —plating (4) or etching (3) a surface of the substrate not covered by the cured image by means of an alkaline solution; —removing (5) the cured image by means of an acidic solution; characterized in that a linking group between the polymerisable groups comprises at least one acid degradable or hydrolysable group selected from the group consisting of an acetal, a ketal, an orthoester, an orthocarbonate, a tertiary ester, a tertiary carbonate and a tertiary urethane and wherein the composition further comprises less than 10 wt % of other monomers including at least two polymerisable groups relative to the total weight of the polymerisable composition.