A method for processing a substrate includes receiving a substrate having fluorinated polymer residue on a surface of the substrate. The fluorinated polymer residue is treated to provide a treated fluorinated polymer residue having increased sensitivity to electromagnetic (EM) radiation exposure. The treated fluorinated polymer residue is treated to EM radiation in an oxygen-containing environment to facilitate a cleaning process for removing the fluorinated polymer residue from the substrate.

Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.

A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.—12 to 10.sup.−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

Methods for treating substrates are described. The methods comprise the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated and exposing the aqueous liquid medium to UV-radiation of a specific wavelength at least in a portion of the flow channel immediately adjacent the at least one outlet slit and after the aqueous liquid medium has flown through the outlet opening towards the substrate and thus prior to and while applying the aqueous liquid medium to the surface of the substrate to be treated. In one method, the electrical conductance of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 μS, by the addition of an additive to the aqueous liquid medium, the aqueous liquid medium prior to the addition of the additive having an electrical conductivity below 20 μS, prior to or while exposing the same to the UV-radiation. Additionally, the pH of the aqueous liquid medium may be adjusted to a range of 8 to 11 or 3 to 6 prior to or while exposing the same to the UV-radiation. The adjustments may lead to a shift in an equilibrium of reactive species generated in the aqueous liquid medium by the UV-radiation towards preferred species.

The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.