The present disclosure provides an ultraviolet radiation control system and a related method for control an ultraviolet radiation in a lithographic apparatus. The ultraviolet radiation control system comprises a housing; a conversion crystal (540), disposed on or in the housing, configured to convert an ultraviolet radiation to a fluorescent radiation; a plurality of photodetectors (550) configured to detect an intensity of a scattered portion of the fluorescent radiation; and at least one diffusive surface (545), disposed on or in the conversion crystal, configured to increase the intensity of the scattered portion of the fluorescent radiation.

A method for determining a sampling scheme, the method including: obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of the performance parameter over a second portion of the semiconductor substrate; and determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

An apparatus for exposure of a relief precursor (P) which comprises a substrate layer and at least one photosensitive layer. The apparatus includes a carrying structure for carrying a relief precursor and an LED array configured to illuminate a photosensitive layer of the relief precursor carried by the carrying structure. The LED array is configured to illuminate simultaneously a predetermined surface area of at least 900 cm.sup.2. The LED array includes a plurality of subsets of one or more LEDs, each subset being individually controllable. The apparatus also includes a control unit to control the plurality of subsets individually, and such that an irradiation intensity difference in the predetermined surface area is within a predetermined range.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

A correcting apparatus of an extreme ultraviolet (EUV) photomask includes: a support portion configured to support an EUV photomask having a main area in which a plurality of pattern elements are arranged, a chemical supply unit configured to supply a chemical to the main area, a light source unit configured to generate a laser beam, and a control unit configured to irradiate the laser beam to the chemical supplied to the main area of the EUV photomask and to, based a laser dosage map for correcting critical dimensions (CDs) of the plurality of pattern elements in the main area, adjust a dosage of the laser beam based on the laser dosage map such that among the plurality of pattern elements, pattern elements having different critical dimensions are etched at different etching rates.

A system for exposing a material with images includes an exposure table and an electronic light projector arranged above the exposure table. The system is adapted to project images towards a material arranged at the exposure table. The electronic light projector and the exposure table are configured to be moved relative to each other during exposure. The electronic light projector is connected to a projector control unit configured to provide a sequence of images to be exposed represented by image data and superimpose a static image pattern onto the edge sections of the images to be exposed, resulting in a sequence of combined images. The width of the static image pattern is slimmer than the image to be exposed. The electronic light projector is configured to expose the combined images sequentially onto the material.

A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

A control system for controlling a laser, comprising a sensor for sensing a physical value indicative of a characteristic of a laser beam emitted by the laser, a switch, a first controller and a second controller. Each controller is configured, to receive a further sensor value from the sensor, adjust a received setpoint value based on the received further sensor value to give an output value and cause the laser to operate in accordance with the output value. The switch is configured to switch between the controllers such that output values are provided from each controller in a cyclic fashion.