The present invention provides an illumination optical system for illuminating an object, comprising: a first light-transmissive member and a second light-transmissive member, and a control unit configured to control drive of the first light-transmissive member and the second light-transmissive member, therein, while the control unit drives the first light-transmissive member such that an incident angle of light to the first light-transmissive member increases, the control unit drives the second light-transmissive member such that the incident angle of light to the second light-transmissive member decreases, thereby changing the intensity of the light exiting from the illumination optical system.

An image projection system is provided. The system can be used for performing lithography. The system includes a deuterium light source, a converging lens coupled to the deuterium light source. The system includes an aperture configured to provide image tiling disposed adjacent to the converging lens. The system includes a movable stage disposed adjacent to the aperture. A method of fabricating an optical device is provided. The method includes depositing a resist over a substrate and determining an exposure pattern for the optical device. The method includes exposing a portion of the resist with a light beam based on the determined exposure pattern. Exposing the portion of the resist includes directing the light beam from a deuterium light source to the substrate and developing the resist.

A system, method, a lithographic apparatus and a software product configured to determine a drift in an attribute of an illumination and a corresponding drift correction. The system includes a lithographic apparatus that includes at least two sensors, each configured to measure a property related to an illumination region provided for imaging a substrate. Furthermore, a processor is configured to: determine, based on a ratio of the measured property, a drift of the illumination region with respect to a reference position; determine, based on the drift of the illumination region, a drift in an attribute related to the illumination upstream of the illumination region measured by the at least two sensors, and determine, based on the drift in the attribute, the drift correction to be applied to the attribute to compensate for the drift in the attribute.

An information processing device includes a processor and a storage device. The processor is configured to acquire data for each parameter provided from each of a light source device which generates pulse light and an exposure apparatus which performs exposure on a wafer with the pulse light output from the light source device, and time data associated with the data; to perform classification, based on the acquired data and time data, for each record of the data associated with same time data for distinguishing whether being data during exposure in which the wafer is irradiated with the pulse light or being data during non-exposure; to associate attribute information indicating an attribute according to the classification with each of the records; to cause the storage device to store the data and the time data associated with the attribute information; and to generate a chart using data read from the storage device.

In one embodiment, a multi-charged-particle-beam writing method includes dividing a data path into a plurality of first blocks based on at least either one of each of a plurality of input/output circuits and a plurality of wiring groups, and calculating a first shift amount for multiple beams for each of the plurality of first blocks. The data path is for inputting control data to a cell array on a blanking aperture array substrate. The control data is for controlling ON/OFF of each beam of the multiple beams. Each of the plurality of wiring groups includes a plurality of pieces of wiring connected to the plurality of input/output circuits and grouped together based on inter-wiring distance. The first shift amount is due to at least one of an electric field and a magnetic field for each of the plurality of first blocks. An irradiation position or a dose of the multiple beams is corrected based on the first shift amount, and irradiation is performed.

An inspection method and an inspection platform applicable for inspecting a light source used to expose a substrate. The light source is adapted to form an illuminated area on a surface of the substrate. The inspection method includes the following steps: placing at least one inspection component on the surface of the substrate; causing the at least one inspection component and the illuminated area to have a relative movement and a relative speed in a specific direction so as to make the illuminated area move across the at least one inspection component, wherein in the specific direction, the illuminated area is smaller in size than the at least one inspection component; inspecting photon energy of incident light in the illuminated area by the at least one inspection component during the relative movement; and determining optical values of the light source according to the photon energy and the relative speed.

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.

The present disclosure provides a control method and system for a critical dimension. The control method includes: establishing a first database of a correspondence between an exposure dose of photoresist and a variation value of a critical dimension; obtaining an actual variation value of the critical dimension, and obtaining a first correction amount of the exposure dose based on the actual variation value and the first database; establishing a second database of a correspondence between waiting time between baking and development of the photoresist and the variation value of the critical dimension; presetting standard lag time between the baking and the development, obtaining actual waiting time between the baking and the development of the photoresist, and determining a time difference between the actual waiting time and the standard lag time; obtaining a compensated variation value of the critical dimension based on the time difference and the second database.

Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.