A system for optical imaging of defects on unpatterned wafers that includes an illumination module, relay optics, a segmented polarizer, and a detector. The illumination module is configured to produce a polarized light beam incident on a selectable area of an unpatterned wafer. The relay optics is configured to collect and guide, radiation scattered off the area, onto the polarizer. The detector is configured to sense scattered radiation passed through the polarizer. The polarizer includes at least four polarizer segments, such that (i) boundary lines, separating the polarizer segments, are curved outwards relative to a plane, perpendicular to the segmented polarizer, unless the boundary line is on the perpendicular plane, and (ii) when the area comprises a typical defect, a signal-to-noise ratio of scattered radiation, passed through the polarizer segments, is increased as compared to when utilizing a linear polarizer.

The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.

The present invention provides an evaluation method for evaluating a state in an apparatus concerning particles existing inside a substrate processing apparatus for processing a substrate, including arranging a plate in a charged state inside the apparatus and obtaining the number of particles adhered to the plate by performing a dummy operation different from an operation of processing the substrate, and evaluating the state in the apparatus based on a coefficient representing a ratio of the number of particles adhered to the plate by performing the dummy operation for the plate in an uncharged state to the number of particles adhered to the plate in the charged state, and the number of particles obtained in the arranging the plate.

An apparatus for monitoring particles in a chemical solution includes a chemical solution supply device that stores a chemical solution and supplies the chemical solution according to a work start signal of a control unit, a first supply channel that is connected with the chemical solution supply device to supply the chemical solution, a filter that is connected with the first supply channel to purify the chemical solution, a branch channel and a main channel that are branched from the filter, a drain valve that is connected with the branch channel to open and close the branch channel, a particle monitor that is connected with the main channel to detect the amount of particles in the chemical solution, and a dispenser unit that receives the chemical solution from the particle monitor to supply the chemical solution to an object to be worked.

A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.

A method includes: receiving a photomask; patterning a wafer by directing a first radiation beam to the wafer through the photomask at a first tilt angle; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam.

In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.

A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a1) providing an image of at least a portion of the photomask, b1) determining a geometric shape of a defect in the image as a repair shape, c1) subdividing the repair shape into a number of n pixels in accordance with a first rasterization, d1) subdividing the repair shape into a number of m pixels in accordance with a second rasterization, the second rasterization emerging from a subpixel displacement of the first rasterization, e1) providing an activating particle beam and a process gas at each of the n pixels of the repair shape in accordance with the first rasterization, and f1) providing the activating particle beam and the process gas at each of the m pixels of the repair shape in accordance with the second rasterization.

A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer gas from a buffer gas injector is injected through a plurality of through holes in the collector. The first buffer gas is directed away from a surface of the collector. A second buffer gas is injected from a ring manifold arranged peripherally to the collector and arranged a first distance toward the light path in relation to the collector. The second buffer gas is directed away from the surface of the collector. The first distance corresponds to a distance from the collector where the first buffer gas merges into a single flow.