A positioning method for particles on a reticle includes: data of positions passed by a target reticle within a preset period of time is determined according to path data of the target reticle that includes particle information of the target reticle at each scan moment; position information of the target reticle when particles are present on a surface of the target reticle is determined according to the data of positions, to obtain target position data of the target reticle; reticle position data of the target reticle within adjacent scan moments is determined according to the target position data, and a particle source position of the particles on the surface of the target reticle is determined from the reticle position data according to position priorities; and a particle position analysis report of the target reticle within the preset period of time is generated according to the particle source position.

A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.

A method for verifying semiconductor wafers includes receiving a semiconductor wafer including a plurality of layers. A first set of measurement data is obtained for at least one layer of the plurality of layers, where the first set of measurement data includes at least one previously recorded thickness measurement for one or more portions of the at least one layer. The first set of measurement data is compared to a second set of measurement data for the at least one layer. The second set of measurement data includes at least one new thickness measurement for the one or more portions of the at least one layer. The semiconductor wafer is determined to be an authentic wafer based on the second set of measurement data corresponding to the first set of measurement data, otherwise the semiconductor is determined to not be an authentic wafer.

A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

A method and apparatus for use in surface delayering for fault isolation and defect localization of a sample work piece is provided. More particularly, a method and apparatus for mechanically peeling of one or more layers from the sample in a rapid, controlled, and accurate manner is provided. A programmable actuator includes a delayering probe tip with a cutting edge that is shaped to quickly and accurately peel away a layer of material from a sample. The cutting face of the delayering probe tip is configured so that each peeling step peels away an area of material having a linear dimension substantially equal to the linear dimension of the delayering probe tip cutting face. The surface delayering may take place inside a vacuum chamber so that the target area of the sample can be observed in-situ with FIB/SEM imaging.

When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 μm×50 μm. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.

A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

The present disclosure provides methods for determining a focus spot window of a wafer and judging whether the wafer needs to be reworked, belonging to the field of semiconductor technology. The method for determining a focus spot window of a wafer includes: acquiring flatness information and location information of a local region of the wafer before exposure; acquiring distribution information of abnormal dies, process information corresponding to the abnormal dies, and data information related to wafer yield; and determining the focus spot window corresponding to a process according to the flatness information and the location information of the local region of the wafer, the distribution information of the abnormal dies, the process information corresponding to the abnormal dies, and the data information related to wafer yield.