Semiconductor systems, apparatuses and methods are provided. In one embodiment, an extreme ultraviolet lithography system includes a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon; at least one electrode positioned at a second vertical level above the first vertical level; and a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage.

An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO.sub.2), silicon nitride (Si.sub.3N.sub.4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

A reticle stage cleaning apparatus for a reticle stage in a lithographic apparatus includes a substrate having a frontside and a backside opposite the frontside and a conductive layer disposed on the frontside of the substrate. The conductive layer is configured to contact the reticle stage to dissipate charge on the reticle stage and to remove particles on the reticle stage via an electrostatic field generated between the conductive layer and the reticle stage. The substrate can include a plurality of grooves and the conductive layer can be disposed on the frontside of the substrate and on a bottom surface of the plurality of grooves. The reticle stage cleaning apparatus can include a second conductive layer configured to remove particles on the reticle stage via a second electrostatic field and be disposed atop the conductive layer in the bottom surface of the plurality of grooves.

A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A method of measuring wear of a substrate holder that is configured to hold a production substrate, the method includes: clamping a measurement substrate to the substrate holder; and measuring strain in the measurement substrate to generate a measurement result. The measurement substrate may have a body having dimensions similar to that of the production substrate; and a strain sensor in the body configured to measure strain in a peripheral portion of the measurement substrate.

A lithography apparatus that forms a pattern on a substrate, and the lithography apparatus includes: a holding unit that holds the substrate; and a cleaning member that brings a polishing unit into contact with the holding unit to clean the holding unit, in which the cleaning member includes a supply port which is arranged in the polishing unit and through which gas is supplied, and a suction port which is arranged in a periphery of the polishing unit and through which gas is sucked.

An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO.sub.2), silicon nitride (Si.sub.3N.sub.4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

A mounting member includes a body having a surface including a mounting surface on which an object is mountable, a channel arranged in the body, and a first layer arranged on an inner surface of the channel. The first layer has a higher thermal conductivity than the body.