Precision screen printing is described that is capable of sub-micron uniformity of the metallization materials that are printed on green sheet ceramic. In some examples, puck is formed with electrical traces by screen printing a paste that contains metal on a ceramic green sheet in a pattern of electrical traces and processing the printed green sheet to form a puck of a workpiece carrier. In some example, the printing includes applying a squeegee of a screen printer to the printed green sheet in a squeegeeing direction while the green sheet is on a printer bed of the screen printer. The method further includes mapping the printer bed at multiple locations along the squeegeeing direction, identifying non-uniformities in the printer bed mapping, and modifying a printer controller of the screen printer to compensate for mapped non-uniformities in the printer bed.

Precision screen printing is described that is capable of sub-micron uniformity of the metallization materials that are printed on green sheet ceramic. In some examples, puck is formed with electrical traces by screen printing a paste that contains metal on a ceramic green sheet in a pattern of electrical traces and processing the printed green sheet to form a puck of a workpiece carrier. In some example, the printing includes applying a squeegee of a screen printer to the printed green sheet in a squeegeeing direction while the green sheet is on a printer bed of the screen printer. The method further includes mapping the printer bed at multiple locations along the squeegeeing direction, identifying non-uniformities in the printer bed mapping, and modifying a printer controller of the screen printer to compensate for mapped non-uniformities in the printer bed.

A method of measuring wear of a substrate holder that is configured to hold a production substrate, the method includes: clamping a measurement substrate to the substrate holder; and measuring strain in the measurement substrate to generate a measurement result. The measurement substrate may have a body having dimensions similar to that of the production substrate; and a strain sensor in the body configured to measure strain in a peripheral portion of the measurement substrate.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burs to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming a dielectric layer that includes a plurality of burls for supporting an object. The example method can further include forming an electrostatic layer that includes one or more electrodes. The example method can further include generating, using the electrostatic layer, an electrostatic force to electrostatically clamp the object to the plurality of burls in response to an application of one or more voltages to the one or more electrodes. In some aspects, a first magnitude of the electrostatic force in a first region of the dielectric layer can be different than a second magnitude of the electrostatic force in a second region of the dielectric layer. For example, the first magnitude and the second magnitude can be part of a linear, non-linear, or stepped (e.g., multi-level) electrostatic force gradient.

A lithography apparatus is provided. The lithography apparatus a reticle having a first surface and a second surface facing each other, and a pattern region formed on the first surface, a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle, a protection conductor within a chamber housing the reticle and the reticle stage; and a power source to supply a voltage to the protection conductor.

An electrostatic clamp (300) and a method for manufacturing the same is disclosed. The electrostatic clamp includes a first layer (302) having a first ultra-low expansion (ULE) material, a second layer (304) coupled to the first layer, having a second ULE material, and a third layer (306), coupled to the second layer, having a third ULE material. The electrostatic clamp further includes a plurality of fluid channels (316) located between the first layer and the second layer and a composite layer (308) interposed between the second layer and the third layer. The method for manufacturing the electrostatic clamp includes forming the plurality of fluid channels, disposing the composite layer on the third layer, and coupling the third layer to the second layer. The plurality of fluid channels is configured to carry a thermally conditioned fluid for temperature regulation of a clamped object.

An imprint apparatus includes: a chuck including a temperature controller configured to adjust a temperature of a substrate having a shot region, the chuck configured to hold the substrate; a template stage configured to hold a template so that a surface of the template with a pattern faces the substrate and configured to change a relative position of the substrate to the template in a vertical direction; and a controller configured to control the chuck and the template stage. The controller is configured to control the temperature controller such that the temperature of the substrate is adjusted based on a magnification error between the pattern and the shot region. The controller controls the template stage such that the pattern is transferred to the shot region of the substrate of which the temperature is adjusted.

Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer over a wafer stage. The method also includes supplying an initial voltage to a plurality of electrodes of the wafer stage based on a topology of the semiconductor wafer, wherein the electrodes of the wafer stage are electrically isolated from each other. The method further includes measuring an adjusted topology of the semiconductor wafer after the initial voltage is supplied. In addition, the method includes supplying different first adjusted voltages to the electrodes of the wafer stage according to the adjusted topology of the semiconductor wafer.