An operating method includes: placing a first mask, a second mask, a third mask and a fourth mask on a rotating base, in which each of the first, second, third and fourth masks has a first exposure unit, a second exposure unit, a third exposure unit and a fourth exposure unit; overlaying the first, second, third and fourth masks such that the first exposure unit of the first mask, the second exposure unit of the second mask, the third exposure unit of the third mask and the fourth exposure unit of the fourth mask are arranged adjacently to form an exposure area; simulating a first coordinate information according to the exposure area by an image simulation unit; scanning the exposure area, by a scanning electron microscope (SEM), to obtain a second coordinate information; and comparing the first coordinate information with the second coordinate information.

Various embodiments of aligning wafers are described herein. In one embodiment, a photolithography system aligns a wafer by averaging individual via locations. In particular, some embodiments of the present technology determine the center locations of individual vias on a wafer and average them together to obtain an average center location of the set of vias. Based on a comparison of the average center location to a desired center location, the present technology adjusts the wafer position. Additionally, in some embodiments, the present technology compares wafer via patterns to a template and adjusts the position of the wafer based on the comparison.

In some embodiments, an interconnection structure, an exposure alignment system, and a fabricating method thereof are provided. The method comprises: providing a wafer, forming a first to-be-connected member and multiple first alignment members in a first conductive layer; form a first opening and multiple second alignment members in a first mask layer, the first opening is used to define a position of a second to-be-connected member; based on reference and measurement coordinates of the first alignment members, and reference coordinates and measurement coordinates of the second alignment members, obtaining wafer coordinates for characterizing a position deviation of the wafer; obtaining adjustment compensation values according to stacking offsets of a preceding wafer; adjusting a position of the wafer; forming the interconnection structure in a first dielectric layer and a second dielectric layer to electrically interconnect the first to-be-connected member and the second to-be-connected member.

In some embodiments, an interconnection structure, an exposure alignment system, and a fabricating method thereof are provided. The method comprises: providing a wafer, forming a first to-be-connected member and multiple first alignment members in a first conductive layer; form a first opening and multiple second alignment members in a first mask layer, the first opening is used to define a position of a second to-be-connected member; based on reference and measurement coordinates of the first alignment members, and reference coordinates and measurement coordinates of the second alignment members, obtaining wafer coordinates for characterizing a position deviation of the wafer; obtaining adjustment compensation values according to stacking offsets of a preceding wafer; adjusting a position of the wafer; forming the interconnection structure in a first dielectric layer and a second dielectric layer to electrically interconnect the first to-be-connected member and the second to-be-connected member.

Actual physical locations of dies on a substrate package may be identified without using a full metrology scan of the substrate. Instead, one or more cameras may be used to efficiently locate the approximate location of any of the alignment features based on their expected positioning in the design file for the packages are substrate. The cameras may then be moved to locations where alignment features should be, and images may be captured to determine the actual location of the alignment feature. These actual locations of the alignment features may then be used to identify coordinates for the dies, as well as rotations and/or varying heights of the dies on the packages. A difference between the expected location from the design file and the actual physical location may be used to adjust instructions for the digital lithography system to compensate for the misalignment of the dies.

Device detects a relative position between first and second marks arranged to be superimposed The device includes illumination system to illuminate the first and second marks with first illumination light, first detection system including first image sensor and first aperture stop and configured to form images of diffracted lights from the first and second marks illuminated with the first illumination light on the first image sensor via the first aperture stop, and processor to obtain the relative position between the first and second marks. The first illumination light forms first light intensity distribution asymmetric with respect to the optical axis of the illumination system on pupil surface of the illumination system, or the first aperture stop is asymmetric with respect to the optical axis of the first detection system.

A substrate processing system includes a substrate information acquiring unit configured to acquire substrate information including position information of a structure which is formed on a first substrate and a determination unit configured to determine an exposure condition for exposing a second substrate which is bonded to the first substrate to light on the basis of the acquired substrate information.

Actual physical locations of dies on a substrate package may be identified without using a full metrology scan of the substrate. Instead, one or more cameras may be used to efficiently locate the approximate location of any of the alignment features based on their expected positioning in the design file for the packages are substrate. The cameras may then be moved to locations where alignment features should be, and images may be captured to determine the actual location of the alignment feature. These actual locations of the alignment features may then be used to identify coordinates for the dies, as well as rotations and/or varying heights of the dies on the packages. A difference between the expected location from the design file and the actual physical location may be used to adjust instructions for the digital lithography system to compensate for the misalignment of the dies.

The present disclosure provides an exposure apparatus that performs an exposure process of forming a pattern onto a substrate by using an original plate, the apparatus comprising: a chuck configured to hold the original plate; an original plate stage configured to hold the chuck; a first measurement device configured to measure a position of the original plate; a second measurement device configured to measure a position of the chuck with respect to the original plate stage; and a controller configured to control a relative position between the original plate and the substrate in the exposure process, based on a deviation of a measurement value of the second measurement device with respect to a reference value, wherein the controller is configured to execute a calibration process of calibrating the reference value based on a measurement value of the first measurement device.