Disclosed are an amplitude monitoring system, a focusing and leveling apparatus and a defocus detection method. The defocus detection method comprises the steps of: adjusting amplitude of a scanning mirror (201) to a theoretical amplitude value and recording corresponding theoretical output voltage values of a photodetector (309) (S1); adjusting the amplitude of the scanning mirror (201) and sampling real-time amplitude values θi of the scanning mirror (201) and real-time output voltage values of the photodetector (309) to calculate compensated real-time demodulation results Si, and recording real-time defocus amounts Hi of a wafer table (305) (S2); subsequent to stepwise displacement of the wafer table (305), establishing a database based on the compensated real-time demodulation results Si and the real-time defocus amounts Hi of the wafer table (305) (S3); and in an actual measurement, sampling in real time an actual amplitude value θk of the scanning mirror (201) and actual output voltage values of the photodetector (309) to calculate a compensated real-time demodulation result Sk, and finding an actual defocus amount Hk of the wafer table (305) by searching the database using a linear interpolation method (S4). Such a focusing and leveling apparatus and defocus detection method avoid degraded stability of the scanning mirror due to long-time operation, which may lead to low wafer surface defocus measurement accuracy of the focusing and leveling apparatus.

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

The invention relates to an autofocusing method for an imaging device (for semiconductor lithography) comprising an imaging optical unit, an object to be measured and an autofocusing device having a reflective illumination, comprising the following method steps: a) defining at least three basis measurement points M(x.sub.j, y.sub.j) on a surface of the object, b) determining the deviation A.sub.z(M)j of a nominal position of the surface of the object from the focal plane of the autofocusing device at the defined basis measurement points M(x.sub.j, y.sub.j), c) storing the deviations A.sub.z(M)j from at least three basis measurement points M(x.sub.j, y.sub.j), d) using the stored deviation A.sub.z(M)j for determining a deviation A.sub.z(P)k at an arbitrary point P(x.sub.k, Y.sub.k) of the surface, and e) using the deviation A.sub.z(P)k for focusing onto the point P(x.sub.k, Y.sub.k).

Methods and apparatuses for estimating at least part of a shape of a surface of a substrate usable in fabrication of semiconductor devices. Such a method includes: obtaining at least one focal position of the surface of the substrate measured by an inspection apparatus, the at least one focal position for bringing targets on or in the substrate within a focal range of optics of the inspection apparatus; and determining the at least part of the shape of the surface of the substrate based on the at least one focal position.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

The present invention provides an exposure apparatus which performs a scanning exposure of each of a plurality of shot regions on a substrate, comprising a measuring device including a first detector configured to perform detection with respect to a measurement point on the substrate and a second detector configured to perform detection with respect to the measurement point prior to detection by the first detector, and configured to measure a height of the substrate based on an output from the first detector and an output from the second detector, and a processor configured to determine, based on measurement obtained based on an output from the first detector along with a scanning exposure of a first shot region, a first measurement point where the measuring device performs measurement first based on an output from the second detector with respect to a second shot region.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

A method for determining a center of a radiation spot irradiated on a surface by a sensor, the sensor including a radiation source and a detector. The method includes: emitting, with the radiation source, a first emitted radiation beam onto the surface to create the radiation spot on the surface, wherein at least a part of a target arranged at the surface is irradiated by the radiation spot; receiving, with the detector, a first reflected radiation beam at least including radiation from the radiation spot reflected by the target; detecting the presence of the target based on the first reflected radiation beam; determining a first measured position of the target based on the first reflected radiation beam; and determining a center of the radiation spot as projected on the surface in at least a first direction based on the first measured position of the target.

A stage assembly for positioning a device along a first axis, the stage assembly comprising: a base; a stage that retains the device and moves above the base; a mover assembly that moves the stage along the first axis relative to the base; a first sensor system that monitors the movement of the stage along the first axis, the first sensor system generating a first signal, the first sensor system having a first sensor accuracy; a second sensor system that monitors the movement of the stage along the first axis, the second sensor system having a second sensor accuracy that is different from the first sensor accuracy of the first sensor system, the second sensor generating a second signal; and a control system that controls the mover assembly using at least one of the first sensor and the second signal.

In an exposure apparatus and a method for defocus and tilt error compensation, each of alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) corresponds to and has the same coordinate in the first direction as a respective one of focusing sensors (600a, 600b, 600c, 600d, 600e, 600f), so that each of the alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) is arranged on the same straight line as a respective one of the focusing sensors (600a, 600b, 600c, 600d, 600e, 600f). As such, alignment marks can be characterized with both focusing information and alignment information. This enables the correction of errors in the alignment information and thus achieves defocus and tilt error compensation, resulting in significant improvements in alignment accuracy and the production yield.