The present disclosure provides an apparatus for manufacturing a semiconductor structure. The apparatus includes a stage, an optical transceiver over the stage, configured to obtain a first profile of a first surface of a substrate, an acoustic transceiver over the stage, configured to obtain a second profile of a top surface of a photo-sensitive layer over the substrate, wherein the stage is adapted to be displaced based on the first profile and the second profile.

The present invention provides a measurement method including while driving a measurement target region of a surface of a substrate in a first direction with respect to a measurement unit, obtaining first measurement information indicating a height of the measurement target region in each of a plurality of first measurement lines parallel to the first direction and different from each other by measuring each measurement line by the measurement unit, and while driving the measurement target region with respect to the measurement unit in a second direction crossing all of the plurality of first measurement lines, obtaining second measurement information indicating a height of the measurement target region in one second measurement line parallel to the second direction by measuring the second measurement line by the measurement unit.

Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.

A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

An optical path compensation apparatus includes a wedge assembly, a driving mechanism and a preload unit. The wedge assembly includes a movable wedge and a fixed wedge. The movable wedge and the fixed wedge having equal wedge angles and respective wedge surfaces inclined in opposite directions. The preload unit is configured to elastically press the movable wedge on the fixed wedge, and the driving mechanism is configured to cause relative movement between the wedge surface of the movable wedge and the wedge surface of the fixed wedge. This optical path compensation apparatus is capable of achieving effective position correction of a focal plane of a measurement system for focusing and leveling in a smooth, convenient and precise way while not causing any error in other directions.

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

A method for vertical control of a lithography machine includes step 1, prior to a scanning exposure, controlling vertical measurement sensors to measure workpiece to obtain overall surface profile data of the workpiece; step 2, performing a global leveling based on the overall surface profile data of the workpiece; and step 3, during the scanning exposure of each exposure field, measuring a local surface profile of the workpiece in real time by the vertical measurement sensors and controlling at least one of a mask stage, a workpiece stage and a projection objective to move vertically according to a Z-directional height value, an Rx-directional tilt value and an Ry-directional tilt value corresponding to the local surface profile of the workpiece, to compensate for the local surface profile of the workpiece in real time, so that an upper surface of each exposure field coincides with a reference focal plane for the exposure field. This method enables flexible vertical control with high accuracy by providing multiple control options.

The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.