Several embodiments of systems incorporating memory devices are disclosed herein. In one embodiment, a memory device can include a controller and a memory component operably coupled to the controller. The controller can include a memory manager, a quality metrics first in first out (FIFO) circuit, and an error correction code (ECC) decoder. In some embodiments, the ECC decoder can generate quality metrics relating to one or more codewords saved in the memory component and read into the controller. In these and other embodiments, the ECC decoder can stream the quality metrics to the quality metrics FIFO circuit, and the quality metrics FIFO circuit can stream the quality metrics to the memory manager. In some embodiments, the memory manager can save all or a subset of the quality metrics in the memory component and/or can use the quality metrics in post-processing, such as in error avoidance operations of the memory device.

A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

The present application describes embodiments of an interface for coupling flash memory and dynamic random access memory (DRAM) in a processing system. Some embodiments include a dedicated interface between a flash memory and DRAM. The dedicated interface is to provide access to the flash memory in response to instructions received over a DRAM interface between the DRAM and a processing device. Some embodiments of a method include accessing a flash memory via a dedicated interface between the flash memory and a dynamic random access memory (DRAM) in response to an instruction received over a DRAM interface between the DRAM and a processing device.

Methods, systems, and devices related to wear leveling for random access and ferroelectric memory are described. Non-volatile memory devices, e.g., ferroelectric random access memory (FeRAM) may utilize wear leveling to extend life time of the memory devices by avoiding reliability issues due to a limited cycling capability. A wear-leveling pool, or number of cells used for a wear-leveling application, may be expanded by softening or avoiding restrictions on a source page and a destination page within a same section of memory array. In addition, error correction code may be applied when moving data from the source page to the destination page to avoid duplicating errors present in the source page.

A storage cluster is provided. The storage cluster includes a plurality of storage nodes, each of the plurality of storage nodes having nonvolatile solid-state memory and a plurality of operations queues coupled to the solid-state memory. The plurality of storage nodes is configured to distribute the user data and metadata throughout the plurality of storage nodes such that the plurality of storage nodes can access the user data with a failure of two of the plurality of storage nodes. Each of the plurality of storage nodes is configured to determine whether a read of 1 or more bits in the solid-state memory via a first path is within a latency budget. The plurality of storage nodes is configured to perform a read of user data or metadata via a second path, responsive to a determination that the read of the bit via the first path is not within the latency budget.

A read method executed by a computing system includes a processor, at least one nonvolatile memory, and at least one cache memory performing a cache function of the at least one nonvolatile memory. The method includes receiving a read request regarding a critical word from the processor. A determination is made whether a cache miss is generated, through a tag determination operation corresponding to the read request. Page data corresponding to the read request is received from the at least one nonvolatile memory in a wraparound scheme when a result of the tag determination operation indicates that the cache miss is generated. The critical word is output to the processor when the critical word of the page data is received.

One embodiment facilitates data access in a storage device. During operation, the system obtains, by the storage device, a file from an original physical media separate from the storage device, wherein the file comprises compressed data which has been previously encoded based on an error correction code (ECC). The system stores, on a physical media of the storage device, the obtained file as a read-only replica. In response to receiving a request to read the file, the system decodes, by the storage device based on the ECC, the replica to obtain ECC-decoded data, wherein the ECC-decoded data is subsequently decompressed by a computing device associated with the storage device and returned as the requested file.

In general, embodiments of the technology relate to a method for characterizing persistent storage. The method includes selecting a sample set of physical addresses in a solid state memory module, where the sample set of physical addresses is associated with a region in the solid state memory module (SSMM). The method further includes issuing a write request to the sample set of physical addresses, after issuing the write request, issuing a request read to the sample set of physical addresses to obtain a copy of the data stored in the sample set of physical addresses, obtaining an error parameter for the copy of the data, determining a calculated P/E cycle value for the SSMM using at least the error parameter; and storing the calculated P/E cycle value in the SSMM.

Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node.

A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.