Implementations of Data Bus Inversion (DBI) techniques within a memory system are disclosed. In one embodiment, a set of random access memory (RAM) integrated circuits (ICs) is separated from a logic system by a bus. The logic system can contain many of the logic functions traditionally performed on conventional RAM ICs, and accordingly the RAM ICs can be modified to not include such logic functions. The logic system, which can be a logic integrated circuit intervening between the modified RAM ICs and a traditional memory controller, additionally contains DBI encoding and decoding circuitry. In such a system, data is DBI encoded and at least one DBI bit issued when writing to the modified RAM ICs. The RAM ICs in turn store the DBI bit(s) with the encoded data. When the encoded data is read from the modified RAM ICs, it is transmitted across the bus in its encoded state along with the DBI bit(s). The logic integrated circuit then decodes the data using the DBI bit(s) to return it to its original state.

Methods of operating a memory, and apparatus configured to perform similar methods, include determining first states of a first sense node and a second sense node while a first voltage level is capacitively coupled to the first sense node and while a second voltage level is capacitively coupled to the second sense node, determining a second states of the first and second sense nodes while a third voltage level is capacitively coupled to the first sense node and while a fourth voltage level is capacitively coupled to the second sense node, determining a fifth voltage level in response to at least the first states of the first and second sense nodes and the second states of the first and second sense nodes, and determining third states of the first and second sense nodes while the fifth voltage level is capacitively coupled to the first and second sense nodes.

The present disclosure relates to a structure including a memory built-in self test (MBIST) circuit which is configured to repair a multi-cell failure for a plurality of patterns in a single wordline of a sliding window of a memory.

A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a memory cell array including memory blocks, a local parity memory block, and a register block. The memory blocks respectively store pieces of partial local data in response to a plurality of column selection signals, or a first partial global parity in response to a global parity column selection signal. The local parity memory block stores local parities of local data in response to the plurality of column selection signals, or a second partial global parity in response to the global parity column selection signal. The register block generates a global parity including the first partial global parities and the second partial global parity. Each piece of local data includes the partial local data, and the global parity is a parity of the pieces of local data and the local parities.

The present disclosure includes apparatuses, methods, and systems for error identification on executed code. An embodiment includes memory and circuitry configured to read data stored in a secure array of the memory, identify a different memory having an error correcting code (ECC) corresponding to the read data of the memory, execute an integrity check to compare the ECC to the read data of the memory; and take an action in response to the comparison of the read data of the memory and the ECC, wherein the comparison indicates that the ECC identified an error in the read data of the memory.

A write method and a write apparatus for a storage device, where the write method includes: acquiring n numerical values that need to be written; determining n bits corresponding to the n numerical values, and information about a stuck-at fault included in the n bits; grouping the n bits into B groups of bits, so that the B groups of bits meet a grouping condition; and correspondingly writing the n numerical values according to information about a stuck-at fault included in each group of bits in the B groups of bits and a numerical value that needs to be written and that is corresponding to the information about the stuck-at fault included in each group of bits in the B groups of bits.

A quantum computer architecture employs logical qubits that are constructed from a concatenation of doubly periodic Josephson junction circuits. The series concatenation of the doubly periodic Josephson junction circuits provides exponential robustness against local noise. It is possible to perform discrete Clifford group rotations and entangling operations on the logical qubits without leaving the protected state.

A method can include identifying, by processing circuitry of a device, a row of rows and/or column of columns to which a first feature and a second feature of an input maps, comparing the identified row and/or column to a row run length encoding (RLE) in a memory of the device that indicates, for each row, whether one or more cells in the row include an input mapped thereto or a column RLE in a memory of the device that indicates, for each column, whether one or more cells in the column include an input mapped thereto, respectively, and determining the input data is anomalous in response to determining either the row RLE indicates that no inputs are mapped to the row to which the input maps, or the column RLE indicates that no inputs are mapped to the column to which the input maps.

A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes first blocks each including magnetic memory lines and performs writing and reading of data for each block by a last-in first-out (LIFO) method by shifting, in a unit of a layer, data portions stored in a plurality of layers, respectively, in a first direction from a top layer to a last layer or in a second direction opposite to the first direction, the magnetic memory lines including the plurality of layers. The controller controls the nonvolatile memory. The controller selects a source block of a compaction process from the first blocks based on a ratio of layers of a second attribute to the plurality of layers in each of the first blocks.