Several embodiments of systems incorporating memory devices are disclosed herein. In one embodiment, a memory device can include a controller and a memory component operably coupled to the controller. The controller can include a memory manager, a quality metrics first in first out (FIFO) circuit, and an error correction code (ECC) decoder. In some embodiments, the ECC decoder can generate quality metrics relating to one or more codewords saved in the memory component and read into the controller. In these and other embodiments, the ECC decoder can stream the quality metrics to the quality metrics FIFO circuit, and the quality metrics FIFO circuit can stream the quality metrics to the memory manager. In some embodiments, the memory manager can save all or a subset of the quality metrics in the memory component and/or can use the quality metrics in post-processing, such as in error avoidance operations of the memory device.

A memory device is disclosed that includes a row of storage locations that form plural columns. The plural columns include data columns to store data and a tag column to store tag information associated with error locations in the data columns. Each data column is associated with an error correction location including an error code bit location. Logic retrieves and stores the tag information associated with the row in response to activation of the row. A bit error in an accessed data column is repaired by a spare bit location based on the tag information.

A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a memory cell array including memory blocks, a local parity memory block, and a register block. The memory blocks respectively store pieces of partial local data in response to a plurality of column selection signals, or a first partial global parity in response to a global parity column selection signal. The local parity memory block stores local parities of local data in response to the plurality of column selection signals, or a second partial global parity in response to the global parity column selection signal. The register block generates a global parity including the first partial global parities and the second partial global parity. Each piece of local data includes the partial local data, and the global parity is a parity of the pieces of local data and the local parities.

A method includes a computing device of a storage network dispersed storage error encoding a plurality of data segments to produce a plurality of sets of encoded data slices. The method further includes the computing device obfuscating a first set of encoded data slices of the plurality of sets of encoded data slices using an obfuscating method to produce a first set of obfuscated encoded data slices. The method further includes the computing device outputting the first set of obfuscated encoded data slices for storage in the storage network.

A memory device is disclosed that includes a row of storage locations that form plural columns. The plural columns include data columns to store data and a tag column to store tag information associated with error locations in the data columns. Each data column is associated with an error correction location including an error code bit location. Logic retrieves and stores the tag information associated with the row in response to activation of the row. A bit error in an accessed data column is repaired by a spare bit location based on the tag information.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.

A system comprising: a first subsystem comprising at least one first processor, and a second subsystem comprising one or more second processors. A first program is arranged to run on the at least one first processor, the first program being configured to send data from the first subsystem to the second subsystem. A second program is arranged to run on the one more second processors, the second program being configured to operate on the data content from the first subsystem. The first program is configured to set a checkpoint at one or more points in time. At each checkpoint it records in memory of the first subsystem i) a program state of the second program, comprising a state of one or more registers on each of the second processors at the time of the checkpoint, and ii) a copy of the data content sent to the second subsystem since the respective checkpoint.

A controller includes a link interface that is to couple to a first link to communicate bi-directional data and a second link to transmit unidirectional error-detection information. An encoder is to dynamically add first error-detection information to at least a portion of write data. A transmitter, coupled to the link interface, is to transmit the write data. A delay element is coupled to an output from the encoder. A receiver, coupled to the link interface, is to receive second error-detection information corresponding to at least the portion of the write data. Error-detection logic is coupled to an output from the delay element and an output from the receiver. The error-detection logic is to determine errors in at least the portion of the write data by comparing the first error-detection information and the second error-detection information, and, if an error is detected, is to assert an error condition.

The present disclosure includes apparatuses and methods related to data movement operations in non-volatile memory. An example apparatus can comprise an array of non-volatile memory cells including a plurality of sections each with a plurality of rows and a controller configured to move data stored in a first portion of the array from a first row of a first section to a second row of the first section and move data stored in a second portion of the array from a second section to the first to create an open row in the second section in response to data from a particular number of portions of memory cells in the first section being moved within the first section.