A method includes a computing device of a storage network obfuscating encoded data slices of a first set of encoded data slices of a plurality of sets of encoded data slices using an obfuscating method to produce obfuscated encoded data slices. The method further includes the computing device of the storage network outputting the obfuscated encoded data slices for storage in the storage network.

Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node.

A flash array provided in embodiments includes a controller and a solid state disk group. The controller counts a data volume of invalid data included in each of a plurality of stripes, and select at least one target stripe from the plurality of stripes. The target stripe is a stripe that includes a maximum volume of invalid data among the plurality of stripes. Then, the controller instructs the solid state disk group to move valid data in the target stripe, and instructs the solid state disk group to delete a correspondence between a logical address of the target stripe and an actual address of the target stripe. This can reduce write amplification, thereby prolonging a life span of the solid state disk.

The present disclosure includes apparatuses, methods, and systems for error identification on executed code. An embodiment includes memory and circuitry configured to read data stored in a secure array of the memory, identify a different memory having an error correcting code (ECC) corresponding to the read data of the memory, execute an integrity check to compare the ECC to the read data of the memory; and take an action in response to the comparison of the read data of the memory and the ECC, wherein the comparison indicates that the ECC identified an error in the read data of the memory.

A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller provides data to the control die for storage on the memory die. Data is initially stored on the memory die as single bit per memory cell data to increase the performance of the programming process. Subsequently, the control die performs an adaptive folding process which comprises reading the single bit per memory cell data from the memory die, adaptively performing one of multiple decoding options, and programming the data back to the memory die as multiple bit per memory cell data.

A system comprising: a first subsystem comprising at least one first processor, and a second subsystem comprising one or more second processors. A first program is arranged to run on the at least one first processor, the first program being configured to send data from the first subsystem to the second subsystem. A second program is arranged to run on the one more second processors, the second program being configured to operate on the data content from the first subsystem. The first program is configured to set a checkpoint at one or more points in time. At each checkpoint it records in memory of the first subsystem i) a program state of the second program, comprising a state of one or more registers on each of the second processors at the time of the checkpoint, and ii) a copy of the data content sent to the second subsystem since the respective checkpoint.

A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller provides data to the control die for storage on the memory die. Data is initially stored on the memory die as single bit per memory cell data to increase the performance of the programming process. Subsequently, the control die performs an adaptive folding process which comprises reading the single bit per memory cell data from the memory die, adaptively performing one of multiple decoding options, and programming the data back to the memory die as multiple bit per memory cell data.

Systems and methods for limiting performance variation in a storage device are described. Storage devices receive work requests to perform one or more operations from other computing devices, such as a host computing device. Completing the work requests may take a response time. In some embodiments, if the response time of executing the work request exceeds a threshold, the storage device may assign additional computing resources to complete the work request.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

A method for operating a memory includes: receiving a first write command and a first write address; receiving first write data a portion of which is masked; reading first read data and a first read error correction code from a region selected based on the first write address in a cell array; detecting and correcting an error in the first read data based on the first read error correction code to produce error-corrected first read data; generating first new write data by replacing the masked portion of the first write data with a portion of the error-corrected first read data; generating a first write error correction code based on the first new write data; and writing the first new write data and the first write error correction code into the region selected based on the first write address in response to the detecting of the error.