An integrated circuit includes a standard cell including a first output pin and a second output pin configured to each output the same output signal, a first routing path connected to the first output pin, and a second routing path connected to the second output pin. The first routing path includes a first cell group including at least one load cell, the second routing path includes a second cell group including at least one load cell, and the first routing path and the second routing path are electrically disconnected from each other outside the standard cell.

An integrated circuit includes a standard cell including a first output pin and a second output pin configured to each output the same output signal, a first routing path connected to the first output pin, and a second routing path connected to the second output pin. The first routing path includes a first cell group including at least one load cell, the second routing path includes a second cell group including at least one load cell, and the first routing path and the second routing path are electrically disconnected from each other outside the standard cell.

A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.

A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.

A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

Method and system for assisting electronic chip design, comprising: receiving netlist data for a proposed electronic chip design, the netlist data including a list of circuit elements and a list of interconnections between the circuit elements; converting the netlist data to a graph that represents at least some of the circuit elements as nodes and represents the interconnections between the circuit elements as edges; extracting network embeddings for the nodes based on a graph topology represented by the edges; extracting degree features for the nodes based on the graph topology; and computing, using a graph neural network, a congestion prediction for the circuit elements that are represented as nodes based on the extracted network embeddings and the extracted degree features.

Training data is collected for each training integrated circuit (IC) design of a set of training IC designs by: extracting a first set of IC design features in a first stage of an IC design flow, and extracting a first set of IC design labels in a second stage of the IC design flow, where the first stage of the IC design flow occurs earlier than the second stage of the IC design flow in the IC design flow. Next, a machine learning model is trained based on the training data.

Training data is collected for each training integrated circuit (IC) design of a set of training IC designs by: extracting a first set of IC design features in a first stage of an IC design flow, and extracting a first set of IC design labels in a second stage of the IC design flow, where the first stage of the IC design flow occurs earlier than the second stage of the IC design flow in the IC design flow. Next, a machine learning model is trained based on the training data.

A method includes instantiating a first plurality of rows in a first region of a fabric. The first region has a height corresponding to a sum of heights of the first plurality of rows. The method also includes instantiating a second plurality of rows in a second region of the fabric. The second region is horizontally adjacent to the first region in the fabric. The second region has a height corresponding to a sum of heights of the second plurality of rows. The method further includes determining whether a row of the first plurality of rows is misaligned with a row of the second plurality of rows and adding a transition region between the row of the first plurality of rows and the row of the second plurality of rows in response.