A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

A heat-assisted magnetic recording (HAMR) medium has a multilayered or laminated heat-sink structure. The laminated heat-sink structure includes a first heat-sink layer and a RuAl—X thermal barrier layer between the medium substrate and the first heat-sink layer. The laminated heat-sink structure may include a second heat-sink layer may between the substrate and the RuAl—X thermal barrier layer. In the RuAl—X thermal barrier layer, X is selected from C and one or more oxides of Si, Ti, W, Zr and Hf. The HAMR medium with the laminated heat-sink structure reduces the amount of required laser current as compared to a similar HAMR medium with a conventional single heat-sink layer of the same thickness, while also slightly improving magnetic properties and recording performance.

A magnetic recording medium includes a long-shaped base substrate having flexibility, a soft magnetic layer, and a magnetic recording layer. A squareness ratio in a longitudinal direction of the base substrate is equal to or less than a squareness ratio in a short-side direction of the base substrate. The squareness ratio in the longitudinal direction of the base substrate is 30% or less.

A magnetic recording medium for heat-assisted magnetic recording is provided. A magnetic recording layer includes upper and lower magnetic recording layers. The lower magnetic recording layer has a lower granular structure including lower magnetic crystal grains, and a lower non-magnetic portion, that surrounds the lower magnetic crystal grains, mainly composed of carbon. The upper magnetic recording layer has an upper granular structure including upper magnetic crystal grains, and an upper non-magnetic portion, that surrounds the upper magnetic crystal grains, formed from a material selected from the group consisting of silicon nitride, titanium oxide and titanium nitride.

A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1×106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer-torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.

A method and system provide a magnetic recording media usable in a magnetic storage device. The magnetic recording media includes a substrate, at least one intermediate layer and a magnetic recording stack for storing magnetic data. The intermediate layer(s) include a majority phase having a first diffusion constant and a secondary phase having a second diffusion constant greater than the first diffusion constant. The magnetic recording stack residing on the intermediate layer such that the at least one intermediate layer is between the substrate and the magnetic recording stack.

A magnetic recording medium includes: a substrate; a recording layer; and a layer being provided between the substrate and the recording layer, the layer containing a superelastic body.

A heat-assisted magnetic recording (HAMR) medium has a multilayered underlayer between the heat-sink layer and the recording layer. One embodiment of the underlayer is a multilayer of a thermal barrier layer consisting essentially of MgO and TiO, and a seed layer containing MgO and nitrogen (N) directly on the thermal barrier layer, with the recording layer on and in contact with the seed layer. The interface between the thermal barrier layer and the seed layer contains Ti and N, some of which may be present as TiN to act as a diffusion barrier to prevent diffusion of the Ti into the recording layer. The Ti-containing thermal barrier layer has a higher thermal resistivity than the conventional MgO thermal barrier/seed layer and thus allows for reduced laser power to the recording layer while still achieving a high thermal gradient at the recording layer.

A magnetic recording medium according to one embodiment includes an underlayer and a magnetic layer above the underlayer. The magnetic layer includes a first magnetic material and particulates. A solid protective layer is positioned above the magnetic layer, the protective layer including a second material. At least some of the particulates of the magnetic layer protrude completely through the protective layer. A method for forming a magnetic recording medium according to one embodiment includes forming a magnetic layer above a substrate, the magnetic layer including a first magnetic material and particulates, and forming a solid protective layer above the magnetic layer to a thickness whereby some of the particulates protrude through the protective layer and are exposed along an upper surface of the protective layer.

A method of manufacturing a magnetic recording medium forms an unfinished product including a magnetic recording layer and a protection layer that are successively formed on a substrate, and forms a lubricant layer on the protection layer of the unfinished product. The lubricant layer is formed by coating a first organic fluorine compound on the protection layer of the unfinished product, and supplying a gas, including a second organic fluorine compound, onto the protection layer of the unfinished product, and decomposing the second organic fluorine compound by Townsend discharge and ultraviolet ray irradiation. The protection layer includes carbon, and the first organic fluorine compound includes a functional group at a terminal thereof.